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Semiconductor structure and forming method thereof

A semiconductor and conductive structure technology, applied in the field of semiconductor structure and its formation, can solve the problem of large silicon structure devices on the insulating layer, etc., and achieve the effects of improving integration, improving release efficiency, and improving performance

Inactive Publication Date: 2016-11-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the silicon-on-insulator structure device with body contact in the prior art has the problem of large area.

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0025] It can be seen from the background art that the silicon-on-insulator structure device with body contact in the prior art has the problem of large area. Now combine a semiconductor structure in the prior art to analyze the reasons for its large area:

[0026] refer to figure 1 , shows a schematic cross-sectional structure of a semiconductor structure.

[0027] The semiconductor structure includes:

[0028] SOI substrate 10, said SOI substrate 10 includes bottom silicon 11, buried oxide layer 12 on the surface of said bottom silicon 11 and top layer silicon 13 on the surface of said buried oxide layer 12; well region in said top layer silicon 13 14 ; a gate structure 21 located on the surface of the well region 14 ; a doped region 22 located on both sides of the gate structure 21 ; and a body contact region 23 located in the well region 14 on one side of the doped region 22 .

[0029] The semiconductor structure is further provided with an isolation region 24 between t...

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PUM

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Abstract

A semiconductor structure and a forming method thereof are disclosed. The forming method includes the steps of forming a substrate, forming a grid structure, respectively forming a first doping area and a second doping area, forming a body contact area adjacent to the first doping area, forming a dielectric layer, and forming a first conducting structure and a second conducting structure. An isolation region between the first doping area and the body contact area is eliminated, the area of the formed semiconductor structure is reduced, and the integration level of the formed semiconductor device is improved. Eliminating the isolation region shortens the distance between the body contact area and a formed body area during working of the formed semiconductor structure, and shortens an accumulated charge releasing path. The accumulated charge releasing efficiency is improved, and the performance of a formed semiconductor structure is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] Compared with the conventional bulk silicon substrate (Bulk Substrate), the silicon-on-insulator structure (SiliconOnInsulator, SOI) has many advantages, such as: eliminating the latch-up effect, reducing the short-channel effect of the device, and improving the device performance. Radiation resistance and so on. Therefore, silicon-on-insulator structures are increasingly used to make MOS transistors. [0003] The practice of using a silicon-on-insulator structure as a device substrate inevitably brings adverse effects while improving the performance of devices and circuits. Among them, the biggest problem is that the device using the silicon-on-insulator structure as the substrate will have a floating body effect (Floating Body Effect). [0004] In the silicon-on-insulator structur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/06
CPCH01L29/66477H01L29/0684H01L29/6653H01L29/78
Inventor 刘张李
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP