Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of dual-channel rc-ligbt device and its preparation method

A dual-channel, device technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting the stability and reliability of LIGBT devices, PN junction cannot be normally turned on, and PN junction conduction voltage drop increases. and other problems, to achieve the effect of improving stability and reliability, low conduction voltage drop, and strong freewheeling ability

Active Publication Date: 2019-05-14
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under low temperature conditions, the turn-on voltage drop of the PN junction formed by the P-type collector region 8 and the N-type electric field cut-off region 7 increases, and it needs to be turned on under a larger current condition, resulting in a more obvious negative resistance phenomenon. , and even cause the PN junction formed by the P-type collector region 8 and the N-type electric field stop region 7 in the device to fail to open normally, which seriously affects the stability and reliability of LIGBT devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of dual-channel rc-ligbt device and its preparation method
  • A kind of dual-channel rc-ligbt device and its preparation method
  • A kind of dual-channel rc-ligbt device and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] This embodiment provides a dual-channel RC-LIGBT device with a voltage level of 400V, and its cell structure is as follows figure 2 As shown, it includes a substrate 1, a silicon oxide dielectric layer 2 on the substrate 1, an N-type drift region 3 on the silicon oxide dielectric layer 2, an emitter structure on the N-type drift region 3, a gate structure, The collector structure and the first dielectric layer 14; the emitter structure is composed of a P-type base region 4, an N+ source region 5, a P+ contact region 6 and a metal emitter 12, wherein the P-type base region 4 is set on the N-type drift In region 3 and located on the left side of its top, P+ contact region 6 and N+ source region 5 are independently arranged in P-type base region 4, and the front surfaces of P+ contact region 6 and N+ source region 5 are both in phase with metal emitter 12 Contact; the gate structure is located on the side of the emitter structure and consists of a gate dielectric 10 and a...

Embodiment 2

[0038] This embodiment provides a dual-channel RC-LIGBT device with a voltage level of 400V, and its cell structure is as follows image 3As shown, it includes a substrate 1, a silicon oxide dielectric layer 2 on the substrate 1, an N-type drift region 3 on the silicon oxide dielectric layer 2, an emitter structure on the N-type drift region 3, a gate structure, A collector structure and a dielectric layer 14; the emitter structure is composed of a P-type base region 4, an N+ source region 5, a P+ contact region 6 and a metal emitter 12, wherein the P-type base region 4 is arranged in the N-type drift region 3 and located on the left side of its top, the P+ contact region 6 and the N+ source region 5 are independently arranged in the P-type base region 4, and the front surfaces of the P+ contact region 6 and the N+ source region 5 are in contact with the metal emitter 12; The gate structure is located on the right side of the emitter structure and is composed of a gate dielect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of power semiconductor integrated circuits, in particular to a lateral reverse conduction insulated gate bipolar transistor (Reverse Conducting-LIGBT, RC-LIGBT) and a preparation method thereof, which are used to suppress the negative resistance (snapback) of a traditional RC-LIGBT device phenomenon, while improving the characteristics of the reverse diode, improving the stability and reliability of the device. The RC-LIGBT device of the present invention forms a unidirectional conductive path with dual channels by introducing a composite structure at the collector terminal of the device, and completely shields the influence of the N-type collector region on the conduction characteristics in the forward LIGBT working mode, completely eliminating Negative resistance (snapback) phenomenon, and has the same low turn-on voltage drop as traditional LIGBT, which improves the stability and reliability of the device; at the same time, it provides two freewheeling currents at the collector terminal in the reverse diode freewheeling mode. The channel optimizes its freewheeling capability and has a small conduction voltage drop.

Description

technical field [0001] The invention belongs to the field of power semiconductor integrated circuits, and relates to a lateral insulated gate bipolar transistor (Lateral Insulated Gate Bipolar Transistor, LIGBT), in particular to a lateral reverse conduction type insulated gate bipolar transistor (Reverse Conducting-LIGBT, RC-LIGBT) and its preparation method. Background technique [0002] Lateral Insulated Gate Bipolar Transistor (LIGBT) is a new type of device in power integrated circuits. It not only has the advantages of LDMOSFET easy to drive, simple control, and easy integration, but also has the advantages of reduced conduction voltage of power transistors, large on-state current, and low loss. It has become one of the core devices of modern power semiconductor integrated circuits. Literature (Shigeki T., Akio N., Youi chi A., Satoshi S. and Norihito T. Carrier-Storage Effect and Extraction-Enhanced Lateral IGBT (E 2 LIGBT): A Super-High Speed ​​and Low On-stateVolt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L21/331
CPCH01L29/66325H01L29/7393
Inventor 张金平田丰境刘玮琪刘竞秀李泽宏任敏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com