Bidirectional voltage-resistant insulated gate bipolar transistor structure

A bipolar transistor, insulated gate technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of large on-state voltage drop of devices, difficult manufacturing process, large loss, etc., and achieves reduced on-state voltage drop, The effect of reducing process difficulty and cost, and thickness reduction

Inactive Publication Date: 2016-11-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on the above problems, the present invention provides a bidirectional voltage-resistant insulated gate bipolar transistor drift region structure, which is used to reduce the thickness of RB-IGBT, and solve the problems of large on-state voltage drop, large loss, and difficult manufacturing process of existing devices. high cost problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bidirectional voltage-resistant insulated gate bipolar transistor structure
  • Bidirectional voltage-resistant insulated gate bipolar transistor structure
  • Bidirectional voltage-resistant insulated gate bipolar transistor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0044] Such as figure 1 As shown, a bidirectional withstand voltage insulated gate bipolar transistor structure includes a polysilicon gate 1, two gate oxide layers 2, two P column regions 3, a P + collector area 4, a P + Base 5,-N + source region 6 , an emitter 7 , a single crystal substrate 8 , a collector 9 , an N-type epitaxial layer 10 and a P base region 11 .

[0045] The single crystal substrate 8, the two P column regions and the N-type epitaxial layer 10 constitute the drift region of the double-phase withstand voltage IGBT structure. The process implementation of the structure is compatible with the existing technology. Except for the drift region, the preparation process of other parts of the bidirectional withstand voltage IGBT structure in this embodiment is the same as the existing technology. Introduce its preparation process in detail here, and its preparation process is as follows:

[0046] S1, such as figure 2 As shown, the substrate is used as the star...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a bidirectional voltage-resistant insulated gate bipolar transistor structure. Compared with a traditional device structure, two P-column zones of a heterogenous doping region opposite to a drift region in doping property are inserted into the drift region. By the adoption of improvement, the thickness of the drift region is decreased, on-state voltage drop is decreased, and the difficulty and cost of a transistor terminal structure machining process are reduced.

Description

technical field [0001] The invention relates to the field of power devices, in particular to a bidirectional withstand voltage insulated gate bipolar transistor structure. Background technique [0002] Reverse-resistance insulated gate bipolar transistor (RB-IGBT) is a new type of IGBT device, which integrates the IGBT cell structure and the high-voltage diode cell structure on the same chip, and has bidirectional withstand voltage capability. Due to the current conventional IGBT devices, in order to achieve a good compromise between on-state voltage drop and turn-off loss, there will be a highly doped field stop (FS) layer on the upper part of the collector, due to the high doping FS layer Existence, in the reverse withstand voltage, the back of the cell cannot withstand the voltage, so the reverse resistance type insulated gate bipolar transistor adopts the epitaxial non-punch-through (NPT) structure, so that the thickness of the IGBT is relatively large, and the device T...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/7397H01L29/0619H01L29/0661
Inventor张广银谭骥卢烁今朱阳军
OwnerINST OF MICROELECTRONICS CHINESE ACAD OF SCI