Simulation method and system of LC-VCO (Inductance Capacitance-Voltage Controlled Oscillator)

Abstract

The invention provides a simulation method of a LC-VCO (Inductance Capacitance-Voltage Controlled Oscillator). The simulation method comprises the following steps: independently obtaining a relationship curve between the transconductance efficiency gm / Id and the device parameter of the NMOS (N-channel metal oxide semiconductor) device and the PMOS (P-channel Metal Oxide Semiconductor) device of a LC-VCO simulator model; setting initial transconductance efficiency (gm / Id)0; according to the relationship curve, obtaining the N device electrical parameter value of the NMOS device under (gm / Id)0+[Delta]n, and obtaining the P device electrical parameter value of the PMOS device under (gm / Id)0-[Delta]n; independently obtaining the device parameter values under the N device electrical parameter value and the P device electrical parameter value; carrying out the simulation of a circuit equivalent model by the device parameter values to obtain a simulation result; and judging whether iteration is carried out or not. By use of the method, phase noise at a low frequency deviation obtains an optimal value so as to improve the phase noise at the low frequency deviation.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to an LC-VCO simulation method and system. Background technique [0002] Inductor-capacitance-voltage-controlled oscillator (LC-VCO) is mainly used in systems such as phase-locked loops and radio frequency transceivers. During system design, performance indicators such as power consumption, phase noise, and tuning range, as well as the compromise of inductance selection, are mainly considered. Content. [0003] In the existing LC-VCO simulation method, one method is to obtain the g of the NMOS device and the PMOS device respectively m / I d Change curves with leakage current and parasitic capacitance, and g can be obtained through these curves m / I d The electrical parameter values ​​under the numerical values ​​are used to obtain the parameter values ​​of the device, and the circuit simulation is performed through these device parameter values ​​to obtain the parameters ...

AI Technical Summary

Problems solved by technology

This method can simplify the simulation process. However, in the actual circuit, the phase noise at the low frequency offset is large, which affects the accuracy of the design.

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