Unlock instant, AI-driven research and patent intelligence for your innovation.

Resistive Memory Device And Fabrication Method Thereof

A technology of devices and resistance values, which is applied in the field of semiconductor integrated circuit devices and can solve problems such as large amounts of current

Active Publication Date: 2016-12-07
SK HYNIX INC
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The phase change of the phase change layer from amorphous to crystalline state is relatively easy due to its crystalline nature, however, a large amount of current is required to change the phase change layer from the crystalline state to the amorphous state

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive Memory Device And Fabrication Method Thereof
  • Resistive Memory Device And Fabrication Method Thereof
  • Resistive Memory Device And Fabrication Method Thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of example embodiments (and intermediate structures). As such, variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are contemplated. Thus, example embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. In the drawings, the length and size of layers and regions may be exaggerated for convenience of illustration. Like reference numerals in the drawings refer to like elements. It will also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be prese...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor integrated circuit device and a fabrication method thereof are disclosed. The resistive memory device includes a lower electrode, a resistive layer formed in a resistance change region on the lower electrode, an upper electrode formed on the resistive layer, and an insertion layer configured to allow a reset current path of the resistive layer, which is formed from the upper electrode to the lower electrode, to be bypassed in a direction perpendicular to or parallel to a surface of the lower electrode.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2014-0166605 filed on Nov. 26, 2014, the entire contents of which are incorporated herein by reference. technical field [0003] The inventive concept relates to a semiconductor integrated circuit device, in particular to a resistive memory device and a manufacturing method thereof. Background technique [0004] With the rapid development of IT technology, there is an urgent need for next-generation memory devices with ultra-high speed, large capacity, etc., which are suitable for mobile information communication systems and devices that process large-capacity information wirelessly. Next-generation memory devices require nonvolatile characteristics of general flash memory devices, high-speed operation characteristics of Static Random Access Memory (SRAM), and high integration of Dynamic RAM (DRAM). In addition, next-generation memory devices are r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C11/56H01L45/00H01L27/115H01L21/8239
CPCH10N70/231H10N70/20H10N70/828H10N70/826H10N70/8828H10N70/8836H10N70/063H10B53/30
Inventor 吴东妍禹昌秀
Owner SK HYNIX INC