A kind of rc-ligbt device and preparation method thereof
A device, N-type technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem that the PN junction cannot be turned on normally, affect the stability and reliability of the LIGBT device, and increase the voltage drop of the PN junction. And other issues
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Embodiment 1
[0035] This embodiment provides an RC-LIGBT device with a voltage level of 400V, and its cell structure is as follows figure 2 As shown, it includes a substrate 1, a silicon oxide dielectric layer 2 located on the substrate 1, an N-type drift region 3 located on the silicon oxide dielectric layer 2, an emitter structure located on the N-type drift region 3, a gate structure, Collector structure and dielectric layer 14; the emitter structure is composed of P-type base region 4, N+ source region 5, P+ contact region 6 and metal emitter 12, wherein P-type base region 4 is arranged in N-type drift region 3 In the middle and on the left side of its top, the P+ contact region 6 and the N+ source region 5 are independently arranged in the P-type base region 4, and the front surfaces of the P+ contact region 6 and the N+ source region 5 are both in contact with the metal emitter 12; The gate structure is located on the right side of the emitter structure, and is composed of a gate di...
Embodiment 2
[0038] This embodiment provides an RC-LIGBT device with a voltage level of 400V, and its cell structure is as follows image 3 As shown, it includes a substrate 1, a silicon oxide dielectric layer 2 located on the substrate 1, an N-type drift region 3 located on the silicon oxide dielectric layer 2, an emitter structure located on the N-type drift region 3, a gate structure, Collector structure and dielectric layer 14; the emitter structure is composed of P-type base region 4, N+ source region 5, P+ contact region 6 and metal emitter 12, wherein P-type base region 4 is arranged in N-type drift region 3 In the middle and on the left side of its top, the P+ contact region 6 and the N+ source region 5 are independently arranged in the P-type base region 4, and the front surfaces of the P+ contact region 6 and the N+ source region 5 are both in contact with the metal emitter 12; The gate structure is located on the right side of the emitter structure, and is composed of a gate die...
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