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CCD pixel structure with shutter capable of eliminating SMEAR effect

A technology of pixel structure and shutter, applied in the direction of electrical components, image communication, color TV parts, etc., can solve the problems of low switching speed of liquid crystal, incomplete on-off, and inability to adapt to high-speed applications, etc., to achieve practical Strong, eliminate SMEAR effect, simple structure effect

Active Publication Date: 2016-12-14
NORTH ELECTRON RES INST ANHUI CO LTD
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Problems solved by technology

[0006] 2. SMEAR effect
However, the transmittance of the liquid crystal light valve is generally 95% when it is turned on, and it is about 5% when it is turned off.

Method used

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  • CCD pixel structure with shutter capable of eliminating SMEAR effect
  • CCD pixel structure with shutter capable of eliminating SMEAR effect
  • CCD pixel structure with shutter capable of eliminating SMEAR effect

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Embodiment Construction

[0036] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0037] 1. The cross-sectional view of the pixel structure of the CCD without shutter design is as follows: Figure 2a , Figure 2b : It can be seen from the figure that when the CCD is working, the pixel control grid voltage V IA Apply high voltage to form a depletion region under the gate. At this time, photons are incident from the back, and the electrons generated by the photoelectric effect are collected into the photosensitive region (depletion region). The number of electrons generated corresponds to the intensity of external incident light, so an image can be generated .

[0038] When the CCD is working, because there is no shutter, the path of the incident light to the depletion region cannot be blocked, so regardless of the gate voltage, the photoelectric conversion continues to occur, and the photogenerated electrons are continuously generated, so the SME...

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Abstract

The invention discloses a CCD pixel structure with a shutter capable of eliminating an SMEAR effect. The structure comprises a high-resistance P-type substrate, and a pixel control gate and photosensitive area charge transfer control gates which are formed on the front surface of the high-resistance P-type substrate, wherein a depletion area is formed below the pixel control gate upon a voltage increase of the pixel control gate, and a P-type buried layer is arranged in the high-resistance P-type substrate; and N+ injection areas are arranged below the photosensitive area charge transfer control gates. The structure provided by the invention has the advantages that a CCD pixel structure is improved, that is, a blocking layer is additionally arranged in front of the traditional pixel collection area, and after transformation, compression and blocking of a photosensitive area are achieved through control of bias voltages of pixels, so that photoelectric blocking is on the pixels, and a shutter function is achieved; and meanwhile, through the pixel-level design and the electric control mode, a pixel control bias voltage changing speed is extremely high, so that a very high switching speed is achieved.

Description

technical field [0001] The invention relates to the field of CCD structure design, in particular to a CCD picture element structure with a shutter that can eliminate the SMEAR effect. Background technique [0002] Electronic shutters play an important role in image sensors and are widely used in high-speed photography, range-gated 3D imaging, adaptive optics, aerial photography, and astrophotography. [0003] 1. CCD classification [0004] According to the charge transfer method, CCD can be divided into frame transfer CCD (FTCCD), interline transfer CCD (ITCCD), and frame interline transfer CCD (FITCCD). Among them, frame transfer CCD is widely used because of its high pixel filling ratio (100%), easy large area array, and large dynamic range. [0005] From a structural point of view, FTCCD consists of upper and lower parts. The upper part is a photosensitive area composed of array pixels, and the lower part is a storage area that is shielded and concentrates vertical regi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/359H04N5/372H04N5/3725H04N25/72
CPCH04N25/62H04N25/625H04N25/72H04N25/71
Inventor 陈远金张猛蛟鞠莉娜梁宛玉吕江萍刘海亮刘彬戴放邹继鑫白涛
Owner NORTH ELECTRON RES INST ANHUI CO LTD
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