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Copper telluride preparing method

A technology of cuprous telluride and elemental copper, which is applied in the direction of binary selenium/telluride compounds, metal selenide/telluride, etc., can solve the problems of high equipment requirements, complicated operation, and complex equipment use, and achieve simple and easy preparation methods Easy to use, low preparation cost and high quality

Active Publication Date: 2016-12-21
广东先导稀贵金属材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because sodium chloride and potassium chloride need to be used as protective layer in the preparation method, therefore, in the cuprous telluride that finally makes, inevitably be mixed with more sodium and potassium of content, and then influence the quality of cuprous telluride product purity, making cuprous telluride of poorer quality
At the same time, this method needs to be completed under high temperature and high pressure, requires the use of complex and expensive equipment, high requirements for equipment, complicated operation, and high cost

Method used

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  • Copper telluride preparing method

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preparation example Construction

[0024] The invention provides a method for preparing cuprous telluride, comprising the following steps:

[0025] Mix elemental copper and elemental tellurium, heat and react under vacuum conditions to obtain cuprous telluride.

[0026] In the present invention, there is no special limitation on the source of the elemental copper and elemental tellurium, which can be generally commercially available. In the present invention, there is no special limitation on the purity of the elemental copper and elemental tellurium, and the purity well known to those skilled in the art will suffice. The present invention is preferably elemental copper with a purity of 5N and elemental tellurium with a purity of 5N. The elemental copper may be in block or granular form, and the elemental tellurium may be in block, granular or powder form. The molar ratio of the elemental copper to the elemental tellurium is preferably 2:1.

[0027] After mixing elemental copper and elemental tellurium, the ...

Embodiment 1

[0043] Mix 1 kg of 5N copper particles and 5N tellurium blocks at a molar ratio of 2:1, put them into a carbon-coated quartz tube, and vacuum the quartz tube until the vacuum degree is 1×10 -3 After Pa, seal the tube. Place the sealed quartz tube in a heating furnace, raise the temperature to 500°C at a rate of 5°C / min, and keep it for 1 hour; then raise the temperature to 920°C at a rate of 3°C / min, and hold it for 2 hours; Raise the temperature to 1120°C and keep it warm for 3h. When the temperature rises to 1120° C., the materials in the quartz tube are mixed evenly by swinging about 60 degrees vertically, and the mixing time is 3 hours. Afterwards, after the temperature of the furnace chamber is naturally cooled to 25-35° C., the material is discharged to obtain cuprous telluride.

Embodiment 2

[0045] Mix 1.5kg of 5N copper particles and 5N tellurium blocks at a molar ratio of 2:1, put them into a carbon-coated quartz tube, and vacuum the quartz tube until the vacuum degree is 5×10 -3After Pa, seal the tube. Place the sealed quartz tube in a heating furnace, raise the temperature to 500°C at a rate of 8°C / min, and keep it for 1h; then raise the temperature to 900°C at a rate of 4°C / min, and keep it for 1h; Raise the temperature to 1150°C and keep it warm for 3h. When the temperature rises to 1150° C., the materials in the quartz tube are mixed evenly by swinging about 60 degrees vertically, and the mixing time is 3 hours. Afterwards, after the temperature of the furnace chamber is naturally cooled to 25-35° C., the material is discharged to obtain cuprous telluride.

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Abstract

The invention provides a copper telluride preparing method. The method comprises the step of mixing pure copper and pure tellurium for heating reaction under the vacuum condition to obtain copper telluride. The number of raw constituents is small, other raw materials are not needed after pure copper and pure tellurium are added, copper telluride can be prepared without high pressure, and the prepared copper telluride has high quality and purity. Meanwhile, the preparing method is simple and easy to implement, complicated and expensive equipment is not needed, and preparing cost is low.

Description

technical field [0001] The invention relates to the field of material synthesis, in particular to a method for preparing cuprous telluride. Background technique [0002] Cuprous telluride (Cu 2 Te) is a blue-black octahedral crystal with a relative density of 7.27 and a melting point of about 900°C. It is soluble in bromine water, but insoluble in water, hydrochloric acid and sulfuric acid. This semiconductor material is widely used in the field of solar cells due to its unique ionic conductivity and pyroelectricity. Therefore, the development of the preparation process of cuprous telluride plays a very important role in the future development of cuprous telluride. [0003] The cuprous telluride disclosed in the prior art is produced by melting electrolytic copper and pure tellurium in a crucible covered with a protective layer of sodium chloride and potassium chloride. Because sodium chloride and potassium chloride need to be used as protective layer in the preparation ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04
CPCC01B19/007C01P2006/80
Inventor 文崇斌朱刘胡智向李琴香
Owner 广东先导稀贵金属材料有限公司