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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, which can be used in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., and can solve problems such as time-consuming and cost-effective

Active Publication Date: 2019-03-01
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a process is time-consuming and expensive

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0050] A number of embodiments of the present invention are presented below and described in detail with drawings, but the above-mentioned embodiments are not all possible embodiments of the present invention. In fact, various embodiments of the present invention can be implemented in various forms, and the intended protection scope of the present invention is not limited to the aspects of the embodiments described herein. The embodiments described herein are intended to satisfy legal requirements for disclosure.

[0051] The singular values ​​"a" and "the" described in the summary of the invention and the scope of the claims herein also include a plurality of values, unless it is clearly stated that it can only be a single value. For example, the meaning of "a gate structure" includes a plurality of such gate structures.

[0052] Unless otherwise specified, all numbers used to represent the amount of ingredients, reaction conditions, etc. described in the summary of the inve...

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a substrate; a first word line pad (word line pad), formed on the substrate; and a second word line pad, formed on the substrate; wherein a space (space) is located on the first Between the word line pad and the second word line pad, the spacing includes a first spacing width and a second spacing width, the first spacing width is represented by a, and the second spacing width is represented by b, wherein the The first pitch width a is smaller than the second pitch width b. The method may include patterning the array and the peripheral region in a self-aligned double patterning step, and providing a semiconductor device fabricated by the combined patterning step.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device and a method for manufacturing the semiconductor device. Background technique [0002] The processes of making integrated circuits can be broadly classified into deposition, patterning, and doping. A semiconductor device can be fabricated through various complex structures with multiple elements fabricated using these different processes. [0003] Photolithography is the process of forming a three-dimensional pattern on a substrate to form a pattern on the substrate. Multiple photolithographic processes such as structural etching and / or grinding and polishing may be performed to fabricate the final semiconductor device. [0004] Photolithography or optical lithography involves exposure and development using a photosensitive polymer or photoresist to form a three-dimensional pattern on a substrate. The portion of the substrate covered by the photoresist is protected from subsequent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/308H01L21/768H01L27/04
CPCH01L21/3083H01L21/76898H01L21/0337H01L29/40114H01L21/32139H10B41/10
Inventor 洪钰珉韩宗廷徐妙枝
Owner MACRONIX INT CO LTD