Low-voltage high-current Mosfet power module

Abstract

The invention discloses a low-voltage high-current Mosfet power module. The low-voltage high-current Mosfet power module comprises an all-copper heat dissipation substrate, a ceramic plate, a driving protection circuit board and Mosfet chips; every two Mosfet chips are connected in parallel, so that a Mosfet chip array can be formed; the driving protection circuit board and the ceramic plate are both fixed on the all-copper heat dissipation substrate; the Mosfet chip array is fixed on the ceramic plate; the drain of each of the Mosfet chips is welded onto the ceramic plate; the gate and source of each of the Mosfet chips are connected with the driving protection circuit board; and the driving protection circuit board is used for outputting positive and negative voltage driving signals to the Mosfet chip array according to external on-off signals. According to the low-voltage high-current Mosfet power module of the invention, the all-copper heat dissipation substrate and the ceramic plate are combined together, so that the problem of difficult heat dissipation can be effectively solved; a large-area current channel can be provided; and the plurality of Mosfet chips are simultaneously driven, so that current passing through the low-voltage high-current Mosfet power module can exceed 3000A.

Description

technical field [0001] The invention relates to the technical field of low-voltage and high-current energy conversion, in particular to a low-voltage and high-current Mosfet power module. Background technique [0002] In the current application of low-voltage and high-current output rectifiers for industrial use, several power devices such as Schottky diodes, fast recovery diodes, and thyristors are commonly used for output distillation and output commutation. These devices are all voltage-drop devices, and a fixed voltage drop is generated when the current flows through the device, and the size of the voltage drop determines the power consumption of the device. At present, the voltage drop of imported low-drop high-power Schottky diodes is generally between 0.65V-0.75V. If a current of 3000A is passed, the thermal power generated in the rectifier diode part is 0.75×3000A=2250W, and a large amount of electric energy is lost in high-power applications, and high heat dissipat...

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Problems solved by technology

In the current application, there are problems such as difficulty in uniform control, complex drive circuit, high device protection cost, difficult heat dissipation structure design, and large space occupation.

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