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CMOS image sensor and manufacturing method thereof

A technology of an image sensor and a manufacturing method, applied in the field of semiconductors, can solve the problems of light loss, the inability of microlenses 103 to gather, etc., and achieve the effects of reducing light reflection, avoiding crosstalk problems, and improving photosensitivity

Active Publication Date: 2016-12-28
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, in a front side illuminated (FSI) CMOS image sensor, due to its relatively thick interlayer dielectric (IMD) 102, the microlens 103 cannot collect enough light, as figure 1 As shown, we can see that some light incident from the edge of the microlens cannot reach the photodiode, resulting in light loss, and may further cause cross talk between adjacent photodiodes.

Method used

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  • CMOS image sensor and manufacturing method thereof

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Embodiment 1

[0053] Below, refer to Figure 2A-2C The structure of the CMOS image sensor proposed by the present invention will be described in detail, in which, Figure 2A-2C A cross-sectional schematic diagram of a CMOS image sensor according to a specific embodiment of the present invention is respectively shown.

[0054] Such as Figure 2A As shown, the CMOS image sensor in an embodiment of the present invention includes: a semiconductor substrate 200, the semiconductor substrate 200 may be at least one of the following materials: silicon, silicon-on-insulator (SOI) , Silicon on insulator (SSOI), silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc. Depending on the manufactured device, the semiconductor substrate 200 may be undoped or doped. An isolation structure (not shown) is formed in the semiconductor substrate 200, and the isolation structure is a shallow trench isolation (STI) structure or a localized silicon oxi...

Embodiment 2

[0066] Below, reference Figure 3A-3F as well as Figure 4 The manufacturing method of the CMOS image sensor according to a specific embodiment of the present invention will be described in detail. among them, Figure 3A-3F Shows a schematic cross-sectional view of a device obtained by sequentially implementing a method for manufacturing a CMOS image sensor according to a specific embodiment of the present invention; Figure 4 It is a flowchart of a manufacturing method of a CMOS image sensor according to a specific embodiment of the present invention.

[0067] First, step S401 is performed to provide a semiconductor substrate, and a plurality of photodiodes are formed in the semiconductor substrate.

[0068] Specifically, such as Figure 3A As shown, a semiconductor substrate 300 is provided. The semiconductor substrate 300 may be at least one of the following materials: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), in...

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Abstract

The invention provides a CMOS image sensor and a manufacturing method thereof, and relates to the technical field of semiconductors. The CMOS image sensor comprises a semiconductor substrate; multiple photodiodes which are arranged in the semiconductor substrate; an interlayer dielectric layer which is arranged on the surface of the semiconductor substrate; and multiple micro-lens arrays which are arranged on the interlayer dielectric layer, wherein each micro-lens array is corresponding one photodiode, and each micro-lens array is composed of multiple micro-lenses. According to the structure of the CMOS image sensor, light is converged by using multiple micro-lenses so that more light, especially light incident from the edge of the micro-lenses, can be converged in comparison with the sensors in the prior art, and thus the problem of crosstalk can be avoided. Besides, the surface of the CMOS image sensor is enabled to be rougher by the multiple micro-lenses and reflection of light can also be reduced.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a CMOS image sensor and a manufacturing method thereof. Background technique [0002] In the field of semiconductor technology, an image sensor is a semiconductor device that can convert optical images into electrical signals. Image sensors can be roughly divided into charge coupled devices (CCD) and complementary metal oxide semiconductor image sensors (CMOS Image Sensor, CIS). The advantages of the CCD image sensor are high image sensitivity and low noise, but it is difficult to integrate the CCD image sensor with other devices, and the power consumption of the CCD image sensor is relatively high. In contrast, CMOS image sensors are gradually replacing CCDs due to their simple process, easy integration with other devices, small size, light weight, low power consumption, and low cost. At present, CMOS image sensors are widely used in the fields of digital cameras, ca...

Claims

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Application Information

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IPC IPC(8): H01L27/146
Inventor 何昭文李曼曼王奇峰
Owner SEMICON MFG INT (SHANGHAI) CORP