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Image sensor and production method thereof

An image sensor and pixel technology, applied in the field of image sensors, can solve problems such as crosstalk, distortion of sensing results, affecting the accuracy of image sensing, etc., to avoid crosstalk problems and improve accuracy.

Inactive Publication Date: 2008-09-24
POWERCHIP SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the problem of crosstalk occurs, which affects the accuracy of image sensing, resulting in distortion of sensing results

Method used

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  • Image sensor and production method thereof
  • Image sensor and production method thereof
  • Image sensor and production method thereof

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Embodiment Construction

[0032] Please refer to Figures 3 to 8b , Figures 3 to 8b It is a process schematic diagram of the manufacturing method of the image sensor 100 of the present invention. First, if image 3 As shown, a semiconductor chip 102 is provided that includes a semiconductor substrate 104, such as a silicon substrate. A plurality of pixels 108 are defined on the surface of the semiconductor substrate 104 to form a pixel matrix. Next, a plurality of electronic components are fabricated on the semiconductor substrate 104 to form a pixel circuit 110 disposed in the dielectric layer 106 . Then, a conductive layer 112 is formed on the dielectric layer 106 , located on the pixel circuit 110 and the dielectric layer 106 , wherein the conductive layer 112 may include a metal material, such as titanium nitride (TiN).

[0033] Then as Figure 4 As shown, a photolithography and etching process is performed, firstly a photoresist layer (not shown) is formed on the surface of the semiconductor...

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Abstract

The invention provides a method for making an image sensor. Firstly a basement of semiconductor is provided, and a plurality of pixels are defined on the surface thereof. Then a plurality of pixel electrodes arranged in the pixels are formed on the basement of semiconductor, and a barrier element is filled between adjacent pixel electrodes, wherein the barrier element contains high dielectric constant materials. Finally a photoconductive layer and a transparent conducting layer are formed on the barrier element and the pixel electrodes in sequence.

Description

technical field [0001] The present invention provides an image sensor, especially an image sensor including barrier elements disposed between pixel electrodes. Background technique [0002] With the development of science and technology, various image sensors have been widely used in digital electronic products, such as scanners or digital cameras, etc., and the current wide range of image sensors include complementary metal oxide semiconductors (complementary metal oxide semiconductors, CMOS) Or charge coupled device (charge coupled device, CCD). The above-mentioned image sensors are all silicon semiconductor devices, which can be used to capture photons, then convert the photons into electrons, and convert them into measurable voltages after transmission to obtain digital data. [0003] At present, a photoconductor-on-active-pixel (POAP) image sensor has been developed in the industry. Its structure stacks photosensitive elements containing hydrogenated amorphous silicon ...

Claims

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Application Information

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IPC IPC(8): H01L21/82H01L27/146
Inventor 刘应励
Owner POWERCHIP SEMICON CORP