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Residue removal method

A technology of residues and polymers, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of through-hole defects and the inability to effectively remove through-hole etching process residues, and achieve the goal of improving characteristics and yield Effect

Active Publication Date: 2020-11-27
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a method for removing residues to solve the problem in the prior art that the residues of the through-hole etching process cannot be effectively removed and cause through-hole defects

Method used

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Embodiment Construction

[0027] The residue removal method proposed by the present invention will be described in further detail below in conjunction with the accompanying drawings and specific examples. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0028] Please refer to figure 1 , which is a flow chart of the residue removal method according to the embodiment of the present invention. Such as figure 1 Shown, the removal method of described residue comprises:

[0029] Step 1: providing a residue removal object, the residue removal object has residue on its surface;

[0030] Step 2: coating an anti-reflective coating on the surface of the residue removal object to absorb the residue;

[0031] Step 3: removing the anti-...

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Abstract

The invention provides a residue removing method. The residue removing method comprises the steps of providing a residue removing object, wherein residue is on the surface of the residue removing object; forming anti-reflective coating to absorb the residue on the surface of the residue removing object; and removing the anti-reflective coating. According to the residue removing method provided by the invention, the surface of the residue removing object is coated with the anti-reflective coating with strong adhesive attraction, so that the residue on the surface is pasted on the anti-reflective coating; then the anti-reflective coating is removed, so that the purpose of removing the residue is realized; and therefore, various problems caused by the residue are solved, and the characteristics and yield of a device are improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for removing residues. Background technique [0002] In the integrated circuit manufacturing process, etching runs through the entire process, and the formation of various device patterns on the wafer surface is formed by etching. The so-called etching refers to the process of removing part of the material from the film on the surface of the wafer to form a pattern. Through etching, the transfer of the pattern from the mask to the wafer can be realized. [0003] Among them, via etching (Via ETCH) refers to the process of etching a series of via holes in the interlayer film (usually a variety of oxide films) between two interconnected metal lines. It is used for the interconnection metal between the two layers of metal lines, through which thousands of transistors are connected into a device circuit with certain functions. A polymer (Polymer) is produced...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02063H01L21/02071
Inventor 侯红娟刘轩朱建野
Owner SEMICON MFG INT (SHANGHAI) CORP