A kind of hbt manufacturing method
A manufacturing method and electrode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as limiting production efficiency, product yield, and increasing manufacturing costs, so as to improve production efficiency and reduce manufacturing costs. Effect
Active Publication Date: 2019-09-20
XIAMEN SANAN INTEGRATED CIRCUIT
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Problems solved by technology
[0003] Therefore, in the manufacturing process of HBT, there is often the problem of increasing the manufacturing cost along with the increase in the number of manufacturing steps, and at the same time limiting the production efficiency and product yield.
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[0024] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. The drawings of the present invention are only schematic diagrams for easier understanding of the present invention, and their specific proportions can be adjusted according to design requirements. Those skilled in the art should understand that the upper and lower relationships of relative components in the figures described herein refer to the relative positions of the components, so all of them can be turned over to present the same components, which should all fall within the scope of the present specification. In addition, the number of elements and structures, the thickness of layers and the comparison of thicknesses between layers shown in the figure are only examples and are not limited thereto, and can be adjusted according to actual design requirements.
[0025] In the following, a GaAs / InGaP type HBT manufacturing process is taken as ...
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Abstract
An HBT manufacturing method. The method comprises successively performing on a semiconductor substrate: emitter mesa etching, so as to leave an electrode forming region of an emitter electrode, to expose an electrode forming region of a base electrode layer (4) and to manufacture a base electrode (8), performing base electrode mesa etching so as to expose an electrode forming region of a collector electrode layer and to manufacture a collector electrode (9), depositing a dielectric layer (10) outside the electrode forming region of the emitter electrode, and etching the dielectric layer so as to open holes in regions corresponding to the base electrode and the collector electrode, and at the same time manufacturing a collector electrode lead-out wire (12), a base electrode lead-out wire (13) and an emitter electrode (11), and carrying out electrode interconnection wiring. An emitter electrode, a base electrode lead-out wire and a collector electrode lead-out wire are manufactured in the same process, thereby saving on the process of independently manufacturing the emitter electrode, and reducing the manufacturing costs.
Description
technical field [0001] The invention relates to semiconductor technology, in particular to a HBT manufacturing method. Background technique [0002] Heterojunction bipolar transistor (HBT) is a transistor whose emitter region, base region and collector region are made of materials with different forbidden band widths. It is an important active device. In the traditional HBT manufacturing process, after epitaxially forming a semiconductor structure with an emitter region, a base region, and a collector region, the emitter electrode is formed in the emitter region, the base electrode is formed in the base region, and the collector region is formed in the collector region. Electrode electrodes, electrode interconnection through metal wiring and other processes. Each of the above processes requires at least the following steps: making a photomask with a corresponding pattern; coating photoresist, transferring the pattern of the photomask to the photoresist through exposure and...
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IPC IPC(8): H01L21/331H01L21/28
Inventor 朱庆芳魏鸿基王江窦永铭许燕丽李斌
Owner XIAMEN SANAN INTEGRATED CIRCUIT