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Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve problems such as unfavorable flash memory performance control, and achieve the effect of ensuring storage performance and improving speed

Active Publication Date: 2019-05-31
SEMICON MFG INT (SHANGHAI) CORP
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  • Claims
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Problems solved by technology

[0004] However, in the prior art, the two sidewalls (111a and 111b) of the floating gate 111 are formed by simultaneous etching, and the inclination angles of the two sidewalls of the floating gate 111 are the same, which is not conducive to the performance control of the flash memory.

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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preparation example Construction

[0039] The core idea of ​​the present invention is to provide a method for preparing a semiconductor device, such as figure 2 shown, including:

[0040] Step S11: providing a substrate, on which a floating gate layer is formed, and at least one control gate structure is formed on the floating gate layer, and the control gate structure has one side and another side opposite to the one side side;

[0041] Step S12: preparing offset spacers on one side and the other side of the control gate structure respectively;

[0042] Step S13: using the control gate structure and the offset sidewall as a mask, etching the floating gate layer to form a floating gate, the bottom of the sidewall of the floating gate is recessed inward to form a concave corner;

[0043] Step S14: removing the offset spacer on the other side of the control gate structure, exposing part of the floating gate; and

[0044] Step S15: removing the exposed floating gate.

[0045] After the step S14, the bottom of...

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Abstract

The invention discloses a manufacturing method of a semiconductor device, comprising: providing a substrate, a floating gate layer is formed on the substrate, at least one control gate structure is formed on the floating gate layer, and the control gate structure has One side and the other side opposite to the one side; offset sidewalls are respectively prepared on one side and the other side of the control gate structure; using the control gate structure and the offset sidewall as a mask, the The floating gate layer is etched to form a floating gate, the bottom of the sidewall of the floating gate is recessed inward to form a concave corner; the offset sidewall on the other side of the control gate structure is removed to expose a part of the floating gate and removing the exposed floating gate. The invention also discloses a semiconductor device. The semiconductor device and the preparation method thereof provided by the invention can independently control the inclination angles of the two side walls of the floating gate, which is beneficial to improving the speed of the flash memory and ensuring the storage performance of the flash memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers, and USB flash drives. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special structu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11517H10B41/00H10B69/00
CPCH10B41/00
Inventor 李敏
Owner SEMICON MFG INT (SHANGHAI) CORP
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