GaN-based enhanced device with gallium nitride insertion layer and preparation method thereof

Abstract

The invention discloses a GaN-based enhanced device with a gallium nitride insertion layer and a preparation method thereof. Since a gallium nitride layer is inserted into a barrier layer, in the preparation of a groove gate structure, corrosion can be stopped at the gallium nitride insertion layer automatically, so that different depths of groove corrosion effects can be realized through different insertion positions of the gallium nitride layer in the barrier layer, and control and adjustment of Schottky gate and MOS structure gate threshold voltage can be finished based on the structure above; the left barrier layer in proper thickness under the gallium nitride insertion layer can protect the trenches during groove corrosion effectively to prevent degradation of device performance; and the GaN-based enhanced device and the preparation method thereof have higher operability and repeatability, and facilitate industrial production.

Description

technical field [0001] The invention belongs to the field of gallium nitride-based devices in semiconductor technology, and in particular relates to a gallium nitride-based enhanced device with a gallium nitride insertion layer and a preparation method thereof. Background technique [0002] Devices based on AlGaN / GaN, InGaN / GaN, InAlN / GaN, etc. are collectively referred to as gallium nitride-based devices, such as AlGaN / GaN heterostructure field effect transistors (heterostructure field effect transistors, HFET), heterojunction bipolar Transistor (heterostructure bipolar transistor, HBT), etc. Gallium nitride-based devices have the advantages of strong breakdown field, high electron mobility, and high saturation speed. They are considered to be strong competitors for the next generation of power switching devices, and have been favored by researchers in recent years. [0003] Due to the strong spontaneous polarization and piezoelectric polarization effects, GaN-based device...

AI Technical Summary

Problems solved by technology

However, in the existing methods for realizing GaN-based enhancement devices, the controllability, operability and repeatability are generally poor, which is not conducive to industrial production

In addition, for enhancement-mode devices, it is also valuable to be able to easily control the threshold voltage during the material and device fabrication process, and most gate groove preparation techniques will obviously have an adverse effect on the channel

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