Trans-impedance amplifier

A technology of transimpedance amplifier and common gate, applied in amplifiers, differential amplifiers, DC-coupled DC amplifiers, etc., can solve problems such as large open-loop gain, large size, and bandwidth limitations

Inactive Publication Date: 2017-01-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF6 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Combining the above two transimpedance amplifier structures, we can see that the op amp-based transimpedance amplifier has a large open-loop gain, but the bandwidth will be limited
The common-gate input structure is simple, but in order to reduce the input resistance, it means that the device must have a large size, or consume a large power consumption to obtain a high transconductance equivalently, which is necessary for high-performance integrated circuits. Avoided
Especially for the high bandwidth requirements of the baseband data rate, the circuit design requirements become more stringent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trans-impedance amplifier
  • Trans-impedance amplifier
  • Trans-impedance amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0037] The transimpedance amplifier circuit provided in this embodiment is implemented using a 0.18 μm RF CMOS process, powered by a 1.8V power supply, and the static bias current of the circuit is only 1.19mA. Parameter Cc 1 、Cc 2 :10nF,Cc 3 、Cc 4 : 1nF, R L1 , R L2 : 1KΩ. Because the capacitance value is large, it can be realized by using off-chip components. Figure 4 Among them, the ordinate Zin represents the differential input impedance of the circuit, and the abscissa Frequency represents the typical baseband frequency, Figure 4 The input impedance simulation results of the transimpedance amplifier are given in , it can be seen that the differential input impedance of the circuit is only 33.8Ω at a typical baseband frequency of 1MHz. And in the baseband frequency range of 20MHz, the impedance is generally maintained in a lower range. Figure 5 Among them, the ordinate NF represents the noise figure, and the abscissa Frequency represents the typical baseband fre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a common-gate input type low-power-consumption trans-impedance amplifier and belongs to the field of integrated circuits. The amplifier is a differential input / output structure and comprises common-gate input levels, load levels and feedback levels. Radio frequency differential signals V<in+ / -> are input through the source ends of the common-gate input levels, are converted into signal currents, are further converted into voltage signals at the load levels and finally form output differential signals V<out+ / ->. The output voltage signals are sampled by the feedback levels and are fed back to the source ends of the common-gate input levels, thereby improving equivalent input transconductance. The common-gate input levels adopt capacitor cross-coupling modes, so that the equivalent input transconductance is further improved. According to the trans-impedance amplifier, the high-performance trans-impedance amplifier can be realized with relatively low power consumption.

Description

technical field [0001] The invention belongs to the field of integrated circuits, in particular to a design technology of a transimpedance amplifier. Background technique [0002] Currently, software radio technology compatible with multiple protocols is becoming more and more important. Correspondingly, the research and development of broadband radio frequency transceiver technology has become increasingly urgent. For a long time in the past, circuit designers have been accustomed to using voltage signal variables to analyze and characterize the characteristics of circuits, which is a concept of circuit design technology based on voltage modulus. In recent years, the potential advantages of current-mode circuits in analog / mixed-signal processing are gradually being tapped, and rapidly promote the development of circuit design techniques based on current-mode operations. At present, many breakthroughs have been made in the research of circuits operating in current mode in ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/02H03F1/56H03F3/45
CPCH03F1/0211H03F1/56H03F3/45179H03F2203/45346
Inventor 郭本青陈俊
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products