A pvd process of metal film sputtering
A metal thin film and sputtering technology, which is applied in metal material coating process, sputtering plating, vacuum evaporation plating, etc., can solve problems such as difficult to prepare electrical properties
Active Publication Date: 2018-12-04
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0004] The present invention provides a PVD equipment and process for metal thin film sputtering to solve the problem that it is difficult to prepare a metal thin film with good electrical properties and good coverage on the groove surface in the existing thin film preparation method
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[0036] The embodiments of the present invention are described in detail below. Examples of the embodiments are shown in the accompanying drawings, in which the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary, and are only used to explain the present invention, and cannot be construed as limiting the present invention.
[0037] In addition, the present invention may repeat reference numbers and / or letters in different examples. This repetition is for the purpose of simplification and clarity, and does not in itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides examples of various specific processes and materials, but those of ordinary skill in the art may be aware of the applicability of other processes and / or the use of other materials. ...
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The invention provides PVD equipment for metal thin film sputtering and a process. The equipment comprises a target, a substrate and a side coil which are connected to a radio frequency power supply, wherein the target can be mounted in the top of a sputtering cavity in a rotatable form, the substrate is located in the bottom of the sputtering cavity, the side coil is located on the side wall of the sputtering cavity, and the target and the side coil apply the radio frequency power supply to jointly act on inert gas so as to generate plasma. As the equipment is additionally provided with the side coil and the radio frequency power supply connected thereto, the plasma density is improved by adjusting the pressure of the inert gas; a thin film which is good in electric property and in surface covering effect of a groove can be formed by combining other process parameters of PVD sputtering; a sustainable sputtering deposition process can be applied to a back gate process of technologies of 22 nanometers and below.
Description
Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a PVD equipment and process for sputtering metal thin films. Background technique [0002] In the past few decades, integrated circuit technology has been developed by leaps and bounds, and technology with a key size of 22 nanometers and below is the development direction of semiconductor integrated circuit technology. The gate of the gate last process does not need to withstand high-temperature annealing at about 1000°C, and the high-k dielectric layer / metal gate structure can be used to improve device performance, which is considered to be the direction of mainstream process development. The physical vapor deposition (Physical Vapor Deposition, PVD) sputtering method to deposit thin films is an important method in the manufacturing process of integrated circuits, but the step coverage effect of the PVD sputtering method needs to be improved. [0003] The gate last process i...
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IPC IPC(8): C23C14/34H01L21/285
Inventor 高建峰唐兆云殷华湘李俊峰赵超
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI