Deposition apparatus and method of conductive oxide layer

Abstract

The present invention provides an apparatus and method for depositing a conductive oxide layer; the apparatus comprises the following units: a first process chamber connected to a first gas supply portion for supplying a first process gas and having a first target for applying a DC or DC pulse voltage from the first power supply unit and a first waveguide tube connected to the first microwave generator; and a second process chamber connected to the second gas supply portion for supplying the second process gas and having a second target for applying a DC or DC pulse voltage from the second power supply unit and a second waveguide tube connected to the second microwave generator. The first microwave generator is configured to apply a power that can cause a plasma discharge of the first process gas.

Description

technical field [0001] The present invention relates to a deposition device and method of a conductive oxide layer, and more specifically relates to a deposition device and method of a conductive oxide layer according to sputtering. Background technique [0002] Conductive oxide layers are being widely used in the field of display devices. A conductive oxide layer such as ITO is conductive and transparent, and therefore can be used in various applications for display devices that display screens. For example, the conductive oxide layer is utilized as an active layer material of a thin film transistor, and thus can also be utilized to realize a transparent display device, and can be utilized as an anode (anode) material of an organic light emitting display device. [0003] The above-mentioned conductive oxide layer is mainly deposited on the substrate by a sputtering process. The sputtering process is a deposition method based on the principle that ions are collided with th...

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Problems solved by technology

[0006] The conductive oxide layer formed by the existing sputtering process has high resistance, so it is limited as an electrode of a display device that requires excellent conductivity characteristics.

[0007] In addition, in order to reduce the resistance of the obtained conductive oxide layer, it is considered to heat the substrate during the sputtering process. However, if the substrate is heated, a conductive oxide layer with low resistance can be obtained, but in this case, the applicable range of applications limited constraints

For example, in the case of an organic light-emitting display device widely used as a display device, the conductive oxide layer should be formed in the state where the organic light-emitting layer is formed, but the organic light-emitting layer is not heat-resistant, so it cannot be formed while the substrate is being heated. Conductive oxide layer, therefore, in order to reduce the resistance of the conductive oxide layer, the method of heating the substrate will not be applicable to organic light-emitting display devices

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