Anisotropic magnetic resistance permalloy and fabrication method of fixed easy magnetization axis thereof

Abstract

The invention discloses an anisotropic magnetic resistance permalloy and a fabrication method of a fixed easy magnetization axis thereof. According to the method, a thin film is fabricated by an oblique sputtering technology, a nanoscale columnar microstructure is formed during the deposition process of the thin film, anisotropy is introduced to the columnar microstructure, and thus, the thin film has an easy magnetization direction of a certain direction; and the prepared thin film has anisotropy in accordance with a set direction by oblique sputtering in a room temperature and by relative movement of incident particles and a substrate, and the prepared thin film has a special easy magnetization axis direction by using such characteristics to adjust an angular speed of a rotary disc, an oblique angle of a target gun and the distance of the substrate. According to an easy magnetization axis orientation induced growth method of a magnetic thin film, an induced magnetic field is not needed to be added, the substrate is not needed to be heated, the method is free from the limitation of thin film area during deposition, a large-area uniform induced magnetic field is not needed to be provided, and the problem of consistency of large-area thin film growth is effectively solved.

Description

technical field [0001] The invention relates to an anisotropic magnetoresistive slope film alloy and a preparation method for fixing an easy-magnetization axis, belonging to the technical field of electronic product preparation. Background technique [0002] Permalloy thin film materials are widely used in mobile communications, household appliances, navigation systems, magnetic sensors, and aerospace fields due to their anisotropic magnetoresistance effect. It is related to the internal magnetization direction, so that this material can be used in many aspects; this material is generally deposited by vertical sputtering, and a uniform induced magnetic field will be added on both sides during the deposition process (attached figure 1 ), the film is deposited at a substrate temperature of about 400°C, thereby inducing an easy axis direction that is the same as the direction of the induced magnetic field. When the direction of the external magnetic field is consistent with the...

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Problems solved by technology

[0003] Although the above method has been matured in the laboratory, it is not easy to obtain a large-scale uniform magnetic field due to the space limitation of the thin film preparation equipment, because with the increase of the sample area, the size of the coil generating the magnetic field will double; at the same time, if necessary, use Applying an induced magnetic field to induce the growth of a large-area film requires a uniform induced magnetic field to ensure the uniformity of the sample; therefore, this method is only suitable for the preparation of small-area samples (such as 1 cm x 1 cm), and for deposition of large-area For thin films (such as the films above 3 inches required for the preparation of semiconductor chips), it is difficult to apply an external magnetic field by this method, and the above method needs to heat the substrate, which limits the application range of the film. Sputtering at room temperature The thin film cannot guarantee the direction of the easy axis of magnetization

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