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Manufacturing method of power diode and power diode

A technology for power diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as reduction, Schottky diodes and PIN diodes cannot meet reverse blocking voltage and on-state voltage at the same time.

Inactive Publication Date: 2017-01-11
PEKING UNIV FOUNDER GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is that Schottky diodes and PIN diodes in the prior art cannot simultaneously meet the requirements of reverse blocking voltage and on-state voltage drop

Method used

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  • Manufacturing method of power diode and power diode
  • Manufacturing method of power diode and power diode
  • Manufacturing method of power diode and power diode

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Embodiment 1

[0036] This embodiment provides a method for manufacturing a power diode, including the following steps:

[0037] Step 1: As shown in FIG. 1(a), a semiconductor substrate 1 is provided, and an N-type epitaxial layer 2 is prepared on one side of the semiconductor substrate 1, and the other side of the semiconductor substrate 1 is used as a cathode of a power diode.

[0038] Step 2: As shown in FIG. 1(b), a silicon oxide layer 3 is prepared on the N-type epitaxial layer 2 by a thermal oxidation method.

[0039] Step 3: As shown in FIG. 1( c ), a polysilicon layer 4 is prepared on the silicon oxide layer 3 .

[0040] Step 4: As shown in Figure 1 (d), a photoresist mask is formed on the polysilicon layer 4, an etching window is formed at a preset position on the photoresist mask, and the silicon oxide layer 3 and the polysilicon are dry etched In layer 4, a trench is formed at a position corresponding to the etching window, so that the bottom of the trench is in contact with the ...

Embodiment 2

[0050]The present invention also provides a power diode manufactured according to the manufacturing method of Embodiment 1. The structure of the power diode is shown in FIG. 1(k). The structure of the power diode of this embodiment will be described in detail below.

[0051] In this embodiment, the first P-type ion implantation region 5 is formed in the N-type epitaxial layer 6 of the power diode corresponding to the position of the trench, and an N-type ion implantation region is formed in the first P-type ion implantation region 5 6 and the second P-type ion implantation region 7, and the N-type ion implantation region 5 is not in contact with the second P-type ion implantation region 7.

[0052] Further, the N-type ion implantation region 6 , the second P-type ion implantation region 7 , the first P-type ion implantation region 5 and the N-type epitaxial layer 6 form an NPN structure.

[0053] In this embodiment, a metal layer 9 is formed on the polysilicon layer 4 of the ...

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Abstract

The invention relates to a manufacturing method of a power diode and the power diode. According to the method, an N-type epitaxial layer is prepared on a semiconductor substrate; a silicon oxide layer and a polysilicon layer are sequentially prepared at the upper part of the N-type epitaxial layer; preset positions of the silicon oxide layer and the polysilicon layer are etched to form a groove in contact with the N-type epitaxial layer; a P-type ion implantation region and an N-type ion implantation region are formed in the N-type epitaxial layer to form an NPN structure; a metal layer is formed at the upper part of the polysilicon layer; and the metal layer is taken as an anode of the power diode. The power diode provided by the invention is relatively high in reverse blocking voltage, the on-state voltage drop is smaller than that of the diode with a traditional structure, the reverse recovery time is relatively short and the leakage current level is much smaller than that of a traditional device. The NPN structure is formed by controlling the groove and a dielectric side wall of the groove in production technology; the technology is relatively simple; and the manufacturing cost of the device is reduced.

Description

technical field [0001] The invention relates to a power diode, in particular to a method for manufacturing the power diode and the power diode. Background technique [0002] Power diodes are key components of circuit systems, and are widely used in high-frequency inverters, digital products, generators, televisions and other civilian products, as well as satellite receivers, missiles and aircraft and other advanced weapon control systems and instrumentation equipment. Military occasions. Power diodes are expanding in two important directions: (1) to tens of millions or even tens of thousands of amperes, which can be applied to high-temperature arc wind tunnels, resistance welding machines, etc.; (2) reverse recovery time is getting shorter and shorter, showing Developing in the direction of ultra-fast, ultra-soft, and ultra-durable, it is not only used in rectification occasions, but also has different functions in various switching circuits. In order to meet the applicati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L29/868H01L29/872
CPCH01L29/6609H01L29/66143H01L29/868H01L29/872
Inventor 李理马万里赵圣哲姜春亮
Owner PEKING UNIV FOUNDER GRP CO LTD
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