Formation method and HDPCVD method for metal interlay dielectric film layer

Abstract

The invention relates to a formation method and an HDPCVD method for a metal interlay dielectric film layer. The HDPCVD method for the metal interlay dielectric film layer adopts a two-step deposition process; a deposition sputtering ratio D/S in the first-step deposition is smaller than the D/S in the second-step deposition; in the first-step deposition, the D/S is 2.1-3.5; the power is 2,800-3,200W; the gas flow is as follows: 100-120sccm of argon, 80-100sccm of oxygen, and 40-50sccm of SiH<4> and SiF<4> altogether; in the second-step deposition, the D/S is 5.1-7.5; the power is 2,300-2,700W; and the gas flow is as follows: 100-120sccm of argon, 160-190sccm of oxygen, and 80-90sccm of SiH<4> and SiF<4> altogether. The HDPCVD method adopts the two-step deposition process; the second-step deposition adopts relatively low power; meanwhile, the gas flow is regulated to enable the environment of an overall deposition chamber to change, thereby obviously relieving a metal angle-cutting phenomenon; meanwhile, relatively low RF power is adopted in the second-step deposition to reduce a bombardment effect, so that the deposition rate in the second-step deposition is increased, thereby improving filling rate while lowering HDP cost; and in addition, the tape-out time of a product can be obviously shortened while the capacity can be improved.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a high-density plasma chemical vapor deposition method for an inter-metal dielectric film and a method for forming an inter-metal dielectric film. Background technique [0002] In the preparation of traditional high-density plasma chemical vapor deposition of fluorine-doped silicon glass (IMD layer HDPFSG) for micro-sized integrated circuit inter-metal dielectric film layers, the main deposition steps of the HDPFSG menu (recipe) are continuous use of larger High power bombardment (ie sputter) to achieve good filling of fluorine-doped silica glass. [0003] However, the inventors found that bombardment with higher power has the risk of changing the morphology of the metal strips of the metal layer, especially for metal strips with a high aspect ratio, the impact will be more obvious. like figure 1 As shown, there is a phenomenon that the upper end of the metal strip is chamfered, and t...

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Problems solved by technology

[0003] However, the inventors found that the bombardment with higher power has the risk of changing the shape of the metal strips of the metal layer, especially for metal strips with a high aspect ratio, the impact will be more obvious

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