Semiconductor device with groove gate structure and manufacturing method of semiconductor device

A trench gate, manufacturing method technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of unrestricted increase in trench density, etc., to enhance competitiveness, reduce production costs, and increase unit density. Effect

Active Publication Date: 2017-01-11
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, limited by the process capability, it is impossible to increase the density of the trench without limit

Method used

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  • Semiconductor device with groove gate structure and manufacturing method of semiconductor device
  • Semiconductor device with groove gate structure and manufacturing method of semiconductor device
  • Semiconductor device with groove gate structure and manufacturing method of semiconductor device

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Embodiment Construction

[0025] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0026] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions are used herein for purposes of illustration only.

[0...

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Abstract

The invention relates to a semiconductor device with a groove gate structure. The semiconductor device comprises a drift region, a metal electrode on the drift region, a groove, a gate oxide layer on the inner surface of the groove, a polysilicon gate in the groove, a dielectric layer arranged in the groove and at the upper part of the polysilicon gate and doped regions at two sides of the top of the groove, wherein the groove penetrates to the drift region from the lower part of the metal electrode. The invention further relates to a manufacturing method of the semiconductor device with the groove gate structure. According to the semiconductor device, use of a pore plate can be avoided by changing the design of the doped regions and the groove and depositing the dielectric layer in front of a pore and etching back the dielectric layer; and the unit intensity of the groove is improved to achieve the effect of improving the current density of a product. Meanwhile, the pore plate is not used, so that the production cost of the product can be reduced and the competitiveness of the product is strengthened.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a semiconductor device with a trench gate structure, and also to a manufacturing method for the semiconductor device with a trench gate structure. Background technique [0002] The traditional insulated gate bipolar transistor (IGBT) with a trench gate structure has been through the compression hole, N-type heavily doped region (NSD) photolithography and overlay size, in order to increase the trench (Trench) density per unit area , to increase the current density of the product. However, limited by the process capability, the trench density cannot be increased without limit. Contents of the invention [0003] Based on this, it is necessary to provide a semiconductor device with a trench gate structure capable of increasing the trench density. [0004] A semiconductor device with a trench gate structure, comprising a drift region, a metal electrode on the drift region, a trench penet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/423H01L29/66H01L21/28
CPCH01L29/739H01L29/7397H01L29/0684H01L29/4236H01L29/66348
Inventor 芮强邓小社孙永生
Owner CSMC TECH FAB2 CO LTD
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