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Crystallization of additives at P/N junctions of bulk-heterojunction photoactive layers

A bulk heterojunction, photosensitive layer technology, applied in sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve problems such as upper limit and limited effect

Inactive Publication Date: 2017-02-22
SABIC GLOBAL TECH BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, one of the problems with using additives in BHJ photosensitive layers is that they have limited or upper bounds on their effect on improving the efficiency of a given BHJ layer
Furthermore, there are not many additives currently available that provide improved efficiency as discussed in the paragraph above

Method used

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  • Crystallization of additives at P/N junctions of bulk-heterojunction photoactive layers
  • Crystallization of additives at P/N junctions of bulk-heterojunction photoactive layers
  • Crystallization of additives at P/N junctions of bulk-heterojunction photoactive layers

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Experimental program
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Embodiment 1

[0062] Embodiment 1 (material, method and flow process)

[0063] Materials: All ACS grade solvents were purchased from Caledon Labs (Caledon, Ontario, Canada) and were used without further purification unless otherwise stated. Tri-n-hexylchlorosilane was purchased from Gelest (Morrisville, PA, USA) and used as received. Deuterated chloroform (CDCl 3 ) and 0.05 v / v % tetramethylsilane (TMS) were purchased from Cambridge Isotope Laboratories, Inc. (Saint Leonard, Quebec, Canada) and used as received. coated with silica ( pore size) and fluorescent indicators were performed on aluminum plates, obtained from Whatman Ltd, visualized under UV light (254nm). Column chromatography was performed using Silica GelP60 (mesh size 40 μm to 63 μm) obtained from SiliCycle Inc. (Quebec, Quebec, Canada). Hydroxyboron subphthalocyanine (HO-BsubPc) (Fulford et al., 2012), dichlorosilicon phthalocyanine ((Cl) 2 -SiPc) (Lowery et al., Inorg Chem.1965, 4:128–128) and dichlorogermanium phthaloc...

Embodiment 2

[0072] Embodiment 2 (result)

[0073] Baseline P3HT:PC 61 BM BHJ devices: A series of baseline BHJ devices using the structure ITO / PEDOT:PSS / Active Layer / LiF / Al were repeatedly fabricated and continuously analyzed and compared throughout the study, where the active layer was P3HT:PC 61 1.0:0.8 mixture of BM. The resulting BHJ OPV device was determined to have a J SC =8.15±0.78mA / cm -2 , V OC =0.62±0.02V, FF=0.55±0.03 and η eff = 2.75 ± 0.21 (average of at least 40 devices). Representative IV curves and mean P3HT:PC with error bars 61 The EQE graph of the BM device is shown in Figure 4 A and Figure 4 Shown in B. Figure 4 A is the characteristic external quantum efficiency (EQE) curve of EQE% versus wavelength. Figure 4 B is for P3HT:PC 61 BM (1.0:0.8, mass ratio) and P3HT:PC 61 BM:X(1.0:0.8:Y) IV curve (in mA / cm 2 current in volts versus bias in volts), where X = bis(tri-n-hexylsilyl oxide) silicon phthalocyanine ((3HS) 2 -SiPc, 1), tri-n-hexylsilyl oxide boro...

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Abstract

Disclosed is a method for making a bulk-heterojunction photoactive layer, positioning an additive at an interface of a bulk-heterojunction photoactive layer, or enhancing the efficiency of a bulk-heterojunction photoactive layer, the method comprising obtaining a mixture comprising a solvent, an electron donor material, an electron acceptable material, and an additive solubilized in the solvent, wherein the additive has a high (negative) enthalpy of crystalization (delta Hcryst ), and forming a bulk-heterojunction photoactive layer from the mixture, wherein crystals of the additive are formed and positioned at an interface between the electron donor material and the electron acceptor material of the bulk- heterojunction photoactive layer.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application No. 61 / 989970, filed May 7, 2014, entitled "Additive Crystallization at P / N Junction of Bulk Heterojunction Photoactive Layer." The entire contents of the referenced patent applications are incorporated into this application by reference. [0003] Background of the invention [0004] A. Field of Invention [0005] The present invention generally relates to the use of additives in bulk heterojunction photosensitive layers. In particular, new discoveries have been made that allow for increased deployment or localization of additives at the donor / acceptor interface (or p-n junction) of a bulk heterojunction photosensitive layer. This can lead to increased efficiency of these layers. [0006] B. Related technical description [0007] Over the past decade, interest in organic photovoltaics (OPVs) has grown exponentially due to the ever pressing need for alte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H10K99/00
CPCC08G2261/1412C08G2261/3223C08G2261/91C08K5/56C08K5/37C08K5/5419C08K3/04H10K85/113H10K85/215H10K30/30H10K30/50C08L65/00Y02E10/549C08K3/045Y02P70/50H10K71/15H10K71/30H10K71/441H10K85/311H10K85/40H01L2031/0344
Inventor 蒂莫西·P·本德杰里米·丹格伯努瓦·H·莱萨德
Owner SABIC GLOBAL TECH BV