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Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device

A technology of light-emitting elements and light-emitting layers, which is applied to electrical components, circuits, and electric solid-state devices. It can solve the problems of quantum dot emission spectrum peak width and narrowness, and achieve the effects of low power consumption, high reliability, and long service life.

Active Publication Date: 2017-03-08
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In addition, because the dispersion of quantum dots limits the phase relaxation, the peak width of the emission spectrum of quantum dots is narrow

Method used

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  • Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
  • Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
  • Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0051] A current-excited light-emitting element (hereinafter, also referred to as a QLED element) using quantum dots as a light-emitting substance has the same characteristics as an organic EL element (hereinafter, also referred to as an OLED element) using an organic compound as a light-emitting substance: It is made thin and light; it is easy to manufacture a surface light source; it can form micro pixels; and it can be bent. Moreover, the color purity, service life, efficiency, and easy selectivity of light-emitting wavelengths of QLED elements are equal to or superior to OLED elements, so the research and development of QLED elements is increasingly strengthened.

[0052] Like the OLED element, the QLED element includes an EL layer including a light-emitting layer including quantum dots as a light-emitting substance between an anode and a cathode. Light emission can be obtained by passing a current through the EL layer. The EL layer may include other layers such as a hole...

Embodiment approach 2

[0127] In this embodiment mode, a light-emitting device using the light-emitting element described in Embodiment Mode 1 will be described.

[0128] In this embodiment mode, a light-emitting device manufactured using the light-emitting element shown in Embodiment Mode 1 will be described with reference to FIGS. 2A and 2B . Note that FIG. 2A is a plan view showing the light emitting device, and FIG. 2B is a cross-sectional view cut along lines A-B and C-D in FIG. 2A . This light-emitting device includes a driver circuit unit (source line driver circuit) 601 , a pixel unit 602 , and a driver circuit unit (gate line driver circuit) 603 indicated by dotted lines as a unit for controlling light emission of the light-emitting element. In addition, reference numeral 604 is a sealing substrate, reference numeral 605 is a sealant, and the inside surrounded by the sealant 605 is a space 607 .

[0129] Note that the lead wiring 608 is a wiring for transmitting signals input to the source...

Embodiment approach 3

[0175] In this embodiment, refer to Figure 6A and Figure 6B An example in which the light-emitting element described in Embodiment Mode 1 is used as a lighting device will be described. Figure 6B is the top view of the lighting device, Figure 6A is along Figure 6B The cross-sectional view of the e–f cut in .

[0176] In the lighting device of this embodiment, the first electrode 401 is formed on the light-transmitting substrate 400 serving as a support. The first electrode 401 corresponds to the anode 101 in the first embodiment. When light is extracted from the first electrode 401 side, the first electrode 401 is formed using a material having light transmittance.

[0177] A pad 412 for supplying a voltage to the second electrode 404 is formed on the substrate 400 .

[0178] An EL layer 403 is formed on the first electrode 401 . The EL layer 403 corresponds to the structure of the EL layer 103 in the first embodiment. In addition, for each configuration, the desc...

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PUM

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Abstract

Provided is a novel light-emitting element, a light-emitting element with a long lifetime, or a light-emitting element with high luminous efficiency. The light-emitting element includes an anode, a cathode, a light-emitting layer, and a hole-injection layer. The light-emitting layer and the hole-injection layer are between the anode and the cathode. The hole-injection layer is closer to the anode than the light-emitting layer is. The light-emitting layer contains a light-emitting substance. The hole-injection layer contains a first substance which is an organic compound having a hole-transport property and a second substance which is a substance having an electron acceptor property with respect to the first substance. The light-emitting substance is a quantum dot.

Description

technical field [0001] One aspect of the present invention relates to a light emitting element, a display module, a lighting module, a display device, a light emitting device, electronic equipment, and a lighting device. Note that one aspect of the present invention is not limited to the technical fields described above. The technical field of one aspect of the invention disclosed in this specification etc. relates to an object, a method, or a manufacturing method. Alternatively, one aspect of the present invention relates to a program (process), machine (machine), product (manufacture), or composition (composition of matter). Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light emitting devices, lighting devices, power storage devices, storage devices, imaging Devices, their driving methods, and their manufactu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50
CPCH10K50/11H10K2101/40H10K50/17H10K2102/00H10K85/615H10K85/631H10K85/633H10K85/6576H10K85/6572H10K50/115H10K50/15H10K2101/30H10K59/00H10K85/351
Inventor 濑尾哲史筒井哲夫滨田孝夫广濑智哉
Owner SEMICON ENERGY LAB CO LTD