A device capable of eliminating polysilicon carbon heads

Abstract

The invention discloses a device capable of eliminating a polycrystalline silicon carbon head material. The device comprises an electrode, a graphite base, a sabot set and a graphite cap, wherein the sabot set comprises a graphite part and a polycrystalline silicon part which are in butt joint, the graphite part forms a main body structure of the sabot set and is arranged on the graphite base, the polycrystalline silicon part forms an upper part structure of the sabot set, and the polycrystalline silicon part is in butt-joint with the upper part of the top of the graphite part; and the upper surface of the graphite cap is covered with a polycrystalline silicon protective shell. The device has the advantages that silicon inside a reducing furnace is also sedimented onto the polycrystalline silicon part of the sabot set while being sedimented onto a silicon core, the polycrystalline silicon part embedded in a silicon rod does not need to be treated and can be directly utilized, and the carbon head material caused by graphite sabot is avoided; the polycrystalline silicon shell avoids the contact between the silicon rod and the graphite cap, and carbon pollution and possibility of causing damages are eliminated; the graphite part can be recycled, and the production cost is reduced; the product quality is improved, the utilization rate of a silicon material is improved, and the manpower resource and the economic cost are reduced.

Description

Technical field [0001] The invention relates to the technical field of polycrystalline silicon preparation devices, in particular to a clasp assembly structure used in a polycrystalline silicon reduction furnace. Background technique [0002] Polysilicon is the main raw material for the production of solar photovoltaic products, and one of the main processes adopted by the Siemens method is chemical reduction vapor deposition. The method is a process of reducing silicon by the reaction of multi-stage rectified trichlorosilane gas with hydrogen at a high temperature of 1100°C and continuously depositing on the initial silicon core to grow into silicon rods. The high temperature in the process is caused by the current passing through the silicon. The core or silicon rod itself maintains heat, and the silicon rods in the reduction deposition furnace are therefore connected in pairs to form an inverted "U" shape. The conductive electrode in direct contact with the silicon rod require...

AI Technical Summary

Problems solved by technology

At present, some enterprises at home and abroad adopt the most primitive method, that is, manual sorting by hammering, which not only causes a lot of waste of polysilicon, but also greatly affects the quality of polysilicon and increases the production cost.

[0004] Invention patent ZL 201120362659.3 discloses a reusable graphite chuck, which is used to clamp and fix the silicon core, which solves the problem of local overheating of the graphite chuck due to poor contact with the conductive surface of the silicon core, resulting in core melting and arcing. and other problems, but the silicon will still be deposited on the graphite card valve, making it difficult to separate the graphite card valve embedded in the polysilicon product

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