Ultraviolet/red light dual-band light detector and preparation method thereof
A photodetector and dual-band technology, which is applied in the field of ultraviolet/red dual-band photodetectors and its preparation, can solve the problems that nanomaterials are difficult to meet, and achieve simple preparation methods, easy industrialization, and mild experimental conditions. Effect
Inactive Publication Date: 2017-03-15
TIANJIN UNIVERSITY OF TECHNOLOGY
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Problems solved by technology
[0005] Optical communication and other technical fields require photodetection devices to meet the detection of different wavelength bands, and it is difficult for single-component nanomaterials to meet this demand.
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[0031] A UV / Red dual-band photodetector, such as figure 1 As shown, it consists of a transparent conductive substrate 1, a zinc oxide seed layer 2, a zinc oxide nanorod 3, a molybdenum disulfide nanosheet 4, a metal electrode 5, a Keithley digital source meter 2602B 6 and a power supply 7, wherein the transparent conductive Substrate 1, zinc oxide seed layer 2, zinc oxide nanorods 3, molybdenum disulfide nanosheets 4 and metal electrodes 5 form a stacked structure from bottom to top. The metal electrodes 5 of the positive pole are respectively connected with the power supply 7 and connected in series with the Keithley digital source meter 2602B 6; the thickness of the zinc oxide seed crystal layer 2 film is 40 nanometers, and the thickness of the zinc oxide nanorod array 3 film is 300 nanometers. The film thickness of the molybdenum sulfide nanosheet 4 is 800 nanometers, and the film thickness of the metal electrode 5 is 50 nanometers; the metal electrode 5 is gold, and the vo...
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Abstract
The invention provides an ultraviolet / red light dual-band light detector which is composed of a transparent conductive substrate, a zinc oxide seed crystal layer, a zinc oxide nanorod, a molybdenum disulfide nanosheet, a metal electrode, a Keithley digital source meter 2602B and a power supply. The transparent conductive substrate, the zinc oxide seed crystal layer, the zinc oxide nanorod, the molybdenum disulfide nanosheet and the metal electrode form a lamination structure from the bottom to the top. The transparent conductive film of the transparent conductive substrate acting as a negative electrode and the metal electrode acting as a positive electrode are connected with the power supply through leads and connected in series with the Keithley digital source meter 2602B. The advantages of the ultraviolet / red light dual-band light detector are that the light detector has high responsiveness in the two important bands of ultraviolet (340-380 nanometers) and red light (650-750 nanometers) so as to realize the ultraviolet and red light dual-band light detector; and the preparation method is simple, moderate in experiment conditions and easy to industrialize.
Description
technical field [0001] The invention belongs to the field of photodetectors, and in particular relates to an ultraviolet / red dual-band photodetector and a preparation method thereof. Background technique [0002] Molybdenum disulfide has a layered structure similar to graphene, and has broad application prospects in the fields of optoelectronic devices, photocatalysis, and solid lubricants. Molybdenum disulfide is an indirect band gap semiconductor material in multilayer or bulk, while a single layer molybdenum disulfide is a direct band gap semiconductor material, and its band gap can be adjusted by changing the number of layers. Molybdenum disulfide layered structures that absorb light of different wavelengths can be obtained by adjusting the number of layers. Therefore, research on layered molybdenum disulfide materials in the field of solar cells and photodetectors has attracted more and more attention. [0003] When the molybdenum disulfide layered structure is applied...
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Patent Timeline
Login to View More IPC IPC(8): H01L31/0236H01L31/032H01L31/0352H01L31/109H01L31/18B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/02363H01L31/032H01L31/035227H01L31/109H01L31/18Y02P70/50
Inventor 徐建萍李岚张玉珠赵相国高艳艳
Owner TIANJIN UNIVERSITY OF TECHNOLOGY