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Manufacturing method of semiconductor device and semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as high cost and consumption

Active Publication Date: 2020-05-15
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the acceleration energy has a limit on the configuration of the device
In addition, ion implantation under higher acceleration energy has the problem of higher cost

Method used

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  • Manufacturing method of semiconductor device and semiconductor device
  • Manufacturing method of semiconductor device and semiconductor device
  • Manufacturing method of semiconductor device and semiconductor device

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Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0025] The manufacturing method of the semiconductor device of this embodiment is ±1 degree, ±1 degree, ±1 degree, or ±1 degree direction to implant impurity ions into the SiC layer. In addition, the semiconductor device manufacturing method of this embodiment implants aluminum ions into the SiC layer in the direction of ±1 degree or ±1 degree.

[0026] The semiconductor device of this embodiment includes: an element region, which is a part of the SiC layer having a first surface and a second surface; a termination region, which is a part of the SiC layer and surrounds the element region; a first electrode; a second electrode, and the second electrode. The SiC layer is sandwiched between the 1 electrodes; the first SiC region of the first conductivity type is arranged in the SiC layer; the second SiC region of the second conductivity type is arranged between the first SiC region and the first surface in the terminal region, and The first electrode is electrically connected an...

no. 2 Embodiment approach

[0126] The semiconductor device manufacturing method of this embodiment differs from the first embodiment in that the body region of the MOSFET is formed using oblique ion implantation and that the MOSFET is not a trench gate type but a planar gate type. Hereinafter, the description of the contents overlapping with the first embodiment will be omitted.

[0127] Figure 12 , Figure 13 It is a schematic cross-sectional view of the semiconductor device of this embodiment. Figure 12 is a cross-sectional view perpendicular to the extending direction of the gate electrode. Figure 13 is a cross-sectional view parallel to the extending direction of the gate electrode and including the main body region. The semiconductor device of this embodiment is a planar gate type vertical MOSFET 200 using SiC (silicon carbide). Hereinafter, a case where the first conductivity type is n-type and the second conductivity type is p-type will be described as an example.

[0128] MOSFET 200 incl...

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Abstract

The present invention relates to a method for manufacturing a semiconductor device and the semiconductor device. The semiconductor device manufacturing method of the embodiment is in the direction of <10-11>±1 degree, <10-1-1>±1 degree, <10-12>±1 degree, or <10-1-2>±1 degree Impurity ions are implanted into the SiC layer.

Description

[0001] [Related applications] [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2015-180505 (filing date: September 14, 2015). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to a method of manufacturing a semiconductor device and the semiconductor device. Background technique [0004] SiC (silicon carbide) is expected as a material for next-generation semiconductor devices. Compared with Si (silicon), SiC has excellent physical properties such as three times the band gap, about ten times the breakdown electric field strength, and about three times the thermal conductivity. If this characteristic is effectively utilized, a semiconductor device capable of low loss and high-temperature operation can be realized. [0005] The diffusion coefficient of impurities in SiC is smaller th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01L29/04H01L29/24H01L29/78
CPCH01L21/265H01L29/045H01L29/24H01L29/7827H01L29/7397H01L29/0615H01L29/7813H01L21/047H01L29/66068H01L29/0634H01L29/1095H01L29/1608H01L29/7811H01L29/167
Inventor 河野洋志新田智洋
Owner KK TOSHIBA