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a photodetector

A photodetector and photodiode technology, applied in the field of photodetectors, to achieve the effects of enhanced absorption, small operating voltage, and high responsiveness

Inactive Publication Date: 2017-12-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] like figure 1 It shows that the conventional silicon-based photoelectric PIN diode structure has high response in the 0.8μm~0.9μm band, but due to the inherent characteristics of the energy band structure of Si material, it has no response to the infrared band above 1.1μm

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Embodiment Construction

[0027] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0028] have to be aware of is, figure 1 and figure 2 Only a schematic simplified view of the diode is represented, the two figures are therefore not drawn to scale.

[0029] Such as figure 2 Shown is a cross-sectional structure diagram of a photodetector provided by the present invention. The photodiode is a Ge PIN type photodiode made of a heavily doped P-type Ge layer 6, a heavily doped N-type Si layer 4, and an intrinsic Ge layer 5 doped in the middle, and a heavily doped N-type Si layer 4, A Si PIN photodiode composed of a heavily doped P-type Si layer 2 and an intrinsic Si layer 3 doped in the middle is connected back to back through a heavily doped N-type Si layer 4; the lateral length of the intrinsic Si layer 3 is less than that of the heavily doped N-type Si layer 4; heavily doped N-type Si layer 4, intrinsic Ge layer 5 and heav...

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Abstract

The invention relates to the field of semiconductor devices, in particular to a photodetector capable of detecting visible light to infrared light bands. The silicon photodiode and the germanium photodiode are connected back to back through the heavily doped N-type Si layer, and the Si PIN photodiode and the Ge PIN photodiode have high response characteristics to short-wave and long-wave, respectively, to realize the visible light to the infrared light band Detection; wherein, the passivation layer not only has the effect of passivating the device, but also reduces the effect of short-wave reflection; the first metal anode contact is simultaneously used as an electrode and a metal mirror, and plays the role of applying voltage and reflecting long-wave photons; and, the present invention The involved photodiode has a low working voltage, can work at a voltage of 5V or below, and is easy to mix and integrate with a preamplifier.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a photodetector capable of detecting visible light to infrared light bands. Background technique [0002] In optical fiber communication systems, photodetectors are essential key components. Short-distance, high-density optical fiber communication systems and data transmission systems in the 0.8 μm to 0.9 μm band often use Si single crystal substrates or GaAs-based PIN photodetectors, avalanche photodetectors and silicon preamplifiers. . The optical fiber communication network in the 1.06μm-1.55μm band usually uses a Ge single crystal substrate or an InP-based PIN photodetector, an avalanche photodetector and a silicon preamplifier mixed and integrated optical receiver for detection. [0003] As one of the important branches, silicon photodiodes are widely used in the field of visible light detection and imaging because of their good spectral response, low noise, long life ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/0232H01L31/101H01L31/11
CPCH01L31/022408H01L31/02327H01L31/1013H01L31/11
Inventor 张有润钟晓康刘影李明晔刘凯胡刚毅张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA