A damage-free isolation method for double-sided battery edges

Abstract

The invention discloses an edge no-damage isolation method for a two-sided battery. The edge no-damage isolation method comprises the steps of manufacturing an annular diffusion barrier layer on the back surface edge and the side surface of a silicon wafer which is subjected to front surface boron diffusion and etching, wherein the back surface edge of the silicon wafer and the diffusion barrier layer have preset widths; performing phosphorus diffusion on a region which is surrounded by the diffusion barrier layer on the back surface of the silicon wafer to form an n+ layer and a PSG layer; and removing the diffusion barrier layer and the PSG layer. By adoption of the edge no-damage isolation method for the two-sided battery provided by the invention, crossed diffusion of boron and phosphorus atoms on the edge region can be suppressed to realize no-damage edge isolation; and in addition, the problems of increasing of technological cost and edge electric leakage caused by introduction of an etching process can be avoided.

Description

technical field [0001] The invention belongs to the technical field of novel high-efficiency crystalline silicon solar cells, and in particular relates to a damage-free isolation method for edges of double-sided cells. Background technique [0002] In 1954, Bell Laboratories in the United States prepared the world's first monocrystalline silicon solar cell with a conversion efficiency of 6%. After sixty years of continuous exploration by scientists, the solar cell has made a huge breakthrough, and the highest conversion efficiency has reached 46%. (Concentrating multi-junction GaAs), and the P-type crystalline silicon solar cells that have occupied the photovoltaic market for many years have gradually shown disadvantages such as weak efficiency growth and excessive light attenuation. Although replacing B atom doping with Ga can avoid the light-induced attenuation effect, the wide resistivity distribution range and Fe element pollution caused by this will still restrict the f...

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Problems solved by technology

[0004] In order to solve the above problems, the present invention provides a damage-free edge isolation method for double-sided batteries, which can suppress the cross-diffusion of boron and phosphorus atoms in the edge region, realize damage-free edge isolation, and avoid the introduction of etching process. The process cost increases and the problem of edge leakage

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