Radio-frequency vertical transition structure based on ceramic microstrip line

Abstract

The invention relates to the technical field of millimeter-wave passive radio-frequency circuits, in particular to a radio-frequency vertical transition structure based on a ceramic microstrip line. The radio-frequency vertical transition structure based on the ceramic microstrip line can realize the characteristics of capacitance and induction devices in the prior art by using the ceramic dielectric microstrip line, utilizing a dielectric constant up to 9.8 of ceramic, adjusting the width of the microstrip line in different positions and combining other inherent characteristics (such as ceramic dielectric layer thickness) of the microstrip line, therefore, introduction of additional capacitance and induction devices in a circuit is not required; an in-line structure of a high-density metallized via hole is not required; the sensitivity of indexes such as a radio-frequency port voltage standing wave ratio and transmission loss to design tolerance, processing tolerance and technology tolerance can be effectively reduced; and first yields of design, processing and manufacturing can be increased. In addition, the unit price of the ceramic dielectric microstrip line is sharply lowered during batch processing, so that the excellent radio-frequency performance can be ensured on the premise that the cost is significantly lowered.

Description

technical field [0001] The invention relates to the technical field of millimeter wave passive radio frequency circuits, in particular to a radio frequency vertical transition structure based on ceramic microstrip lines. Background technique [0002] RF coaxial connectors are the largest category of RF connectors, and their biggest feature and advantage is compatibility with RF cables. The vertical connection of the existing RF chip output port (such as GSG port, CPW port or microstrip output port) to the RF coaxial connector generally adopts such as figure 1 The ordinary dielectric microstrip line shown in the figure is transformed into a similar coaxial structure. In this conversion method, since the ordinary dielectric microstrip line I is used, it is necessary to add additional capacitive and inductive devices II and use a large number of ground metallized vias III The quasi-coaxial structure to match the radio frequency discontinuity; at this time, the local width of t...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the need to use additional capacitive inductance devices and metallized through-hole coaxial structures when the microstrip line-like coaxial structure is used in the prior art to connect and convert the radio frequency chip GSG to the radio frequency coaxial connector. It leads to the problem that the RF port VSWR, transmission loss and other indicators have poor tolerance to design tolerance, processing tolerance, and process tolerance, and provides a RF vertical transition based on ceramic microstrip lines that does not require additional capacitive and inductive devices. structure

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