Five-junction solar cell and preparation method thereof
A technology of solar cells and sub-cells, applied in the field of solar cells, can solve the problems of many defects, unfavorable carrier collection, affecting the photoelectric conversion efficiency of four-junction solar cells, etc., achieve high voltage and low current output, and improve photoelectric conversion efficiency. , to achieve the effect of spectral absorption
Active Publication Date: 2018-03-20
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology
Four-junction solar cells rely on the growth of 1eV materials, and generally need to use GaInNAs materials, and GaInNAs materials have many defects and low carrier lifetimes, resulting in a small diffusion length, which is not conducive to the collection of carriers, and directly affects the four-junction solar cells. Further Improvement of Photoelectric Conversion Efficiency of Junction Solar Cells
At present, the InGaAs / InGaAsP double-junction solar cells on the InP substrate and the GaInP / GaAs double-junction solar cells on the GaAs substrate are mostly bonded to form a monolithic series four-junction solar cell; but this four-junction solar cell The combination of band gaps cannot perfectly achieve full-spectrum absorption, especially the short-wavelength part of the light cannot be effectively converted into electrical energy
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[0023] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, the embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to particular intended uses.
[0024] In the drawings, the shapes and dimensions of elements may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or like elements.
[0025] It will be understood that, although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element fro...
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The invention discloses a five-junction solar cell, which comprises an InP substrate, and an InGaAs / InGaAsP / InAlAs triple-junction solar cell and a GaInP / AlGaInP double-junction solar cell sequentially stacked on the InP substrate. The invention also discloses a method for preparing a five-junction solar cell, including: preparing an InGaAs / InGaAsP / InAlAs triple-junction solar cell on an InP substrate; preparing a GaInP / AlGaInP double-junction solar cell on a GaAs substrate; combining InGaAs / InGaAsP / InAlAs triple-junction solar cells are wafer-bonded with GaInP / AlGaInP double-junction solar cells to obtain InGaAs / InGaAsP / InAlAs / GaInP / AlGaInP five-junction solar cells. The five-junction solar cell according to the present invention satisfies the bandgap combination of 0.73eV / 1.05eV / 1.47eV / 1.89eV / 2.2eV, thereby realizing broad-spectrum absorption, obtaining high voltage and low current output, and effectively reducing the The resistance loss under high concentration light improves the photoelectric conversion efficiency of solar cells.
Description
technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a five-junction solar cell and a preparation method thereof. Background technique [0002] Multi-junction III-V compound semiconductor solar cells absorb the part of sunlight that matches their bandgap widths through their various semiconductor materials with different bandgap widths, so as to achieve broad-spectrum absorption of sunlight, which has become the focus of solar cell research. a hot spot. [0003] At present, the relatively mature material system of solar cells is the GaInP / GaAs / Ge triple-junction cell, which has a maximum photoelectric conversion efficiency of 32% to 33% under one sun, and a photoelectric conversion efficiency greater than 41% under concentrated light. In order to further improve the photoelectric conversion efficiency of solar cells, more junction bandgap combinations are generally required to effectively utilize the solar spectrum. Four-ju...
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IPC IPC(8): H01L31/0687H01L31/0304H01L31/18
CPCH01L31/03046H01L31/0687H01L31/1844Y02E10/544Y02P70/50
Inventor 代盼陆书龙谭明吴渊渊季莲杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI