Solid dielectric trap depth and density detection method based on thermally stimulated current

A technology of thermally stimulated current and density detection, which is applied in measurement devices, material analysis by electromagnetic means, instruments, etc., can solve the problem of long measurement time and achieve the effect of good fault tolerance

Active Publication Date: 2017-04-26
SHANGHAI JIAO TONG UNIV
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Problems solved by technology

[0005] In view of the defects that the existing technology cannot objectively reflect the real trap distribution form of the medium, some key points in the detection process need to be artificially set, and the measurement takes a long time, etc., a method of trap depth and trap depth of solid medium based on thermal stimulation current is proposed. The density detection method does not need to make assumptions about the trap en...

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  • Solid dielectric trap depth and density detection method based on thermally stimulated current
  • Solid dielectric trap depth and density detection method based on thermally stimulated current
  • Solid dielectric trap depth and density detection method based on thermally stimulated current

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Embodiment Construction

[0027] Such as Figure 4 As shown, in this embodiment, the commercial polyethylene terephthalate (PET) film was measured three times under the same conditions to obtain three thermal stimulation current curves. The film sample has a thickness of 100 microns and a diameter of 42mm. Apply a polarization voltage of 1000V, polarize at 100°C for 30 minutes, then rapidly cool to minus 100°C, and heat the sample at a heating rate of 0.05°C / s. Record The measured thermally stimulated current curve. This embodiment only takes polyethylene terephthalate film as the detection object, but this method is applicable to all solid medium films and not only this object. For other objects, the thickness of the sample should be between 100 μm and 300 μm, the applied voltage can be increased proportionally with the increase of the thickness, the polarization temperature should be lower than the melting point of the sample material, the polarization time is 30 minutes, and the sample is cooled ra...

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Abstract

The invention discloses a solid dielectric trap depth and density detection method based on thermally stimulated current. The method is characterized in that thermoelectric stimulation is conducted on a solid dielectric film, a thermally stimulated current curve of the solid dielectric film is detected, current components caused by charge release of traps with different depths in the solid dielectric film are analyzed through a numerical integration method, a two-dimensional matrix formed by a characteristic function is obtained, the measured thermally stimulated current curve serves as input based on the nonnegative linear least-squares algorithm, and finally density distribution of the traps with different depths in the solid dielectric film is obtained. According to the method, it is not needed to assume the energy level distribution of the traps in the calculation process, the whole curve is automatically analyzed, and the probability of personal errors is eliminated; besides, the influence of wrong data like negative current data can be effectively avoided, and thus the method is more accordant with actual conditions and has better fault tolerance.

Description

technical field [0001] The invention relates to a technique in the field of medium physical measurement, in particular to a method for detecting trap depth and density of solid medium based on thermal stimulation current. Background technique [0002] Thermal stimulation theory and its research methods are developed on the basis of dielectric physics and semiconductor physics. Because it can measure the microscopic parameters of dielectric materials simply and effectively, it has gradually attracted people's attention. effective means of such materials. The charge that causes thermal stimulation current is inseparable from the electrical properties of the dielectric material itself. There are few free electrons in the dielectric, and its conductivity is very small. However, in the process of production and processing, a certain number of traps inevitably exist in the dielectric. Under the action of a certain electric field, the electrons in the electrode are injected into...

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Application Information

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IPC IPC(8): G01N27/00
CPCG01N27/00
Inventor 王亚林吴建东尹毅
Owner SHANGHAI JIAO TONG UNIV
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