Method of manufacturing mems devices

Abstract

The invention discloses a method for manufacturing a MEMS device. The method comprises spraying a release layer for de-bonding after temporary bonding to the surface of a SOI sheet or carrier bare silicon sheet, spin-coating the SOI sheet or carrier bare silicon sheet with an adhesive layer for temporary bonding, temporarily bonding the SOI sheet and the carrier bare silicon sheet, curing the SOI sheet and carrier bare silicon sheet, spin-coating the surface of the bonded carrier bare silicon sheet with an adhesive layer for resisting alkaline corrosion, corroding the bottom silicon base of the SOI sheet so that a part of the base is removed by corrosion, removing the adhesive layer for resisting alkaline corrosion, cleaning the bonded sheet, carrying out corrosion to remove a buried oxide layer, pasting one surface of the bonded device layer to a UV film, de-bonding the bonded sheet, removing the carrier bare silicon sheet, and cleaning the device layer to remove the release layer residual on the surface of the device layer after de-bonding so that a device is obtained. The method can produce an ultra-thin device having thickness of 10 microns or less, can maintain excellent thickness uniformity, has high manufacturing accuracy and is easy to massively produce.

Description

technical field [0001] The invention relates to a method for manufacturing a MEMS device. Background technique [0002] With the continuous development of MEMS (full name Micro-Electro-Mechanical System, micro-electromechanical system) technology, it is required that semiconductor processing can handle thin substrates, coupled with the limitation of packaging volume, making the manufacturing process of many types of MEMS sensor chips difficult. Facing the problem of thinning. Driven by consumer electronics such as mobile phones, music players, cameras, game systems, and automotive sensors such as tire pressure sensors, pressure sensors for electronic fuel injection systems, etc., the size and thickness of MEMS devices are constantly decreasing. In order to meet the manufacturing needs of these products, thinning device wafers has become a general trend. However, in the conventional grinding thinning process, if it is necessary to ensure that the chip still has good uniform...

AI Technical Summary

Problems solved by technology

In the conventional grinding thinning process, if you want to ensure that the chip still has good uniformity after grinding, the thinning limit is 50um (microns)

Even so, for devices that are extremely sensitive to surface stress changes (such as pressure sensor chips), the output characteristics of the device will be affected after being thinned by conventional grinding. If the amount of grinding, uniformity and grinding force cannot be accurately controlled, mass production is not possible

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