Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Large-area exposure method for maskless scanning photoetching

An exposure method and a large-area technology, applied in the field of large-area exposure, can solve the problems of not being able to improve the image preprocessing speed, waste the computing resources of the upper computer, and consume the space of the upper computer, so as to improve storage and scanning efficiency, reduce invalid data, The effect of improving time and space efficiency

Active Publication Date: 2017-05-10
XIDIAN UNIV
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Segmenting its bitmap will generate a large amount of exposure frame data, in which there is a large amount of data redundancy, which not only consumes the space of the host computer, but also seriously wastes the computing resources of the host computer
[0005] The current method only uses a fixed DMD or DMD group for scanning exposure, which cannot improve the image preprocessing speed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-area exposure method for maskless scanning photoetching
  • Large-area exposure method for maskless scanning photoetching
  • Large-area exposure method for maskless scanning photoetching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The present invention is further described below in conjunction with accompanying drawing.

[0035] Such as figure 1 As shown, the present invention firstly converts the BMP bit to be exposed figure 1 Perform processing, cut out the effective information area 2 to generate BMP bits after removing invalid information image 3 ;Such as figure 1 As shown, ensure that there is an alignment area of ​​iw width on the left and top of the effective information area, which is used to mark the alignment of the lens, and the iw is generally not less than 200px.

[0036] Generally, the bitmap of PCB plate making is composed of many identical circuit wiring diagrams combined in rows and columns, so that batch exposure production can be carried out. According to this feature, use the similar area detection technology in digital image processing to divide the effective area in the BMP bitmap, and determine to use N groups of DMDs. For the sake of illustration, choose N=4. Such...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a large-area exposure method for maskless scanning photoetching, which is used for improving an image preprocessing speed in large-area photoetching and particularly in batch photoetching. According to the large-area exposure method disclosed by the invention, N groups of DMDs (Digital Micro-Mirrors) (each group comprises m DMDs); in a preprocessing stage of an exposed image, only one copy of exposure frame data in N similar regions in the image is generated; correspondingly, the N groups of DMDs are regulated to corresponding starting points of the N regions, then relative positions of the DMDs and the starting points are kept unchanged, and the same copy of exposure frame data is continuously scanned and exposed. According to the large-area exposure method disclosed by the invention, the image preprocessing speed can be greatly improved, and a redundancy of the generated exposure frame data is reduced, so that integral efficiency of a maskless scanning photoetching system is improved.

Description

technical field [0001] The invention belongs to the technical field of maskless photolithography in the printed circuit board industry, and in particular relates to a large-area exposure method for maskless scanning photolithography. Background technique [0002] A digital micromirror device (such as TI's DMD) is a rectangular array composed of many micromirrors. The maskless lithography system uses a laser with a specific frequency to irradiate the DMD. By controlling the rotation angle of the small micromirror, a specific The image is projected on photoresist. [0003] Maskless lithography uses the above-mentioned micromirror to directly reflect the image on the photoresist, eliminating the need for a mask plate, which not only reduces the cost, but also improves the flexibility of exposure and industrial production efficiency. [0004] Scanning lithography is to maintain the reverse movement of the image in the DMD during the movement of the DMD, thereby forming a stable...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/2022G03F7/2051G03F7/70358
Inventor 杨刚武洋吴晨枫石峰
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com