Controllable temperature disc structure provided with ceramic bush

Abstract

The invention discloses a controllable temperature disc structure provided with a ceramic bush. The controllable temperature disc structure is mainly used to solve a problem of conventional controllable temperature discs of increasing of quantity, difficulty, and costs of processed supporting members caused by increased sparking probability. The controllable temperature disc structure comprises an aluminum disc and the ceramic bush. The aluminum disc is provided with three through holes A and nine through holes B, and the inner part of the aluminum disc is provided with a heat transfer channel, which is provided with an inlet and an outlet. The ceramic bush is provided with a boss and an edge. The inner part of the ceramic bush is provided with three jacking pin sleeve pipes corresponding to the three through holes A, and each jacking pin sleeve pipe is provided with a through hole C. The inner part of the ceramic bush is provided with nine supporting columns corresponding to the nine through holes, and the bottom part of the ceramic bush is provided with a hole A and a hole B. The controllable temperature disc structure is used to eliminate the sparking phenomenon and control the temperature.

Description

technical field [0001] The invention relates to a temperature-controllable disk surface structure with a ceramic bushing, belonging to the technical field of semiconductor thin film deposition application and manufacture. Background technique [0002] In the existing semiconductor coating equipment, the thin film deposition process usually needs to be carried out in a vacuum and a certain temperature environment. For example, in plasma chemical vapor deposition equipment, the thin film substrate is often carried by a temperature-controllable substrate, and the substrate is usually used as the following The electrode corresponds to some upper electrode parts to generate the electric field environment required by the thin film deposition process. When the process reaction is in progress, the upper electrode is loaded with radio frequency voltage, and the base of aluminum material is used as the lower electrode to be grounded, and the thin film substrate receives process gas on ...

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Problems solved by technology

[0002] In the existing semiconductor coating equipment, the thin film deposition process usually needs to be carried out in a vacuum and a certain temperature environment. For example, in plasma chemical vapor deposition equipment, the thin film substrate is often carried by a temperature-controllable substrate, and the substrate is usually used as the following The electrode corresponds to some upper electrode parts to generate the electric field environment required by the thin film deposition process. When the process reaction is in progress, the upper electrode is loaded with radio frequency voltage, and the base of aluminum material is used as the lower electrode to be grounded, and the thin film substrate receives process gas on the base to react and adhere. To form a thin film, in order to avoid sparking caused by radio frequency voltage, ceramic positioning rings are usually installed on the edge of the thin film substrate of aluminum materials in the industry to locate the center of the thin film substrate, and several thin film substrates of equal height are arranged on the base surface of the aluminum material Support, the physical and chemical properties of the support must meet the standards of the semiconductor industry, such as when the thin film substrate is in contact with the support, there must be no particles, etc., so ceramic materials or sapphire materials are generally used in the industry to embed aluminum materials However, in the thin film deposition process, the fluorination treatment often destroys the embedded structure arranged on the surface of the aluminum material substrate, resulting in that when several ceramic materials or sapphire materials are embedded in the aluminum material substrate, Height inconsistencies, affecting the level of thin film substrates

Therefore, when debugging this kind of semiconductor equipment, it is necessary to process ceramic materials or sapphire supports of different specifications. When placed on the surface of an aluminum material substrate, except for the ceramic positioning ring on the edge of the substrate, the rest of the aluminum surface is exposed to the reaction chamber, which increases the probability of sparking, prolongs the shutdown and debugging time, and increases the number, difficulty and cost of supporting parts. , igniting and burning the parts and damaging the film, because the way of embedding the support will also bring the risk of the support coming out of the aluminum substrate, reducing the reliability of the equipment

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