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Flexible high-temperature resistant BaTi<1-x>Co<x>O3 resistive random access memory

A bati1-xcoxo3, resistive memory technology, applied in electrical components and other directions, can solve the problems of incomparable high temperature resistance and resistive performance, limited application, poor oxidation resistance, etc., to overcome the effect of high temperature resistance

Active Publication Date: 2017-05-10
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A flexible plastic film substrate is used to make the memory flexible and bendable, but its high temperature resistance and resistive performance are not as good as those of pure inorganic resistive memory based on hard substrates, and the plastic itself has poor oxidation resistance and is easily damaged. The characteristics further limit the application of this kind of flexible resistive memory in flexible devices

Method used

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  • Flexible high-temperature resistant BaTi&lt;1-x&gt;Co&lt;x&gt;O3 resistive random access memory
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  • Flexible high-temperature resistant BaTi&lt;1-x&gt;Co&lt;x&gt;O3 resistive random access memory

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Embodiment 1

[0021] A kind of flexible high temperature resistant BaTi of the present invention 1-x co x o 3 The resistive variable memory has a structure of a stacked layer structure composed of a bottom electrode 3 , a functional layer 2 and a top electrode 1 . Preferably, the substrate is a mica substrate 4 with a thickness of 0.5 μm, and the bottom electrode 3 is a SrRuO with a thickness of 70 nm. 3 Thin film, the functional layer 2 is BaTi with a thickness of 300nm 0.95 co 0.05 o 3 thin film, the top electrode 1 is an Au thin film with a thickness of 100 nm. The resistance ratio of the high and low resistance states of the memory is shown as 2. The memory is in 10 7 、10 8 and 10 9 The resistance distribution of the high and low resistance states after the secondary resistance switch cycle test is as follows: image 3 shown. The memory has a bend radius of 1mm and a bend of 10 4 、10 5 and 10 6 After the second high and low resistance state resistance distribution as Fig...

Embodiment 2

[0023] A kind of flexible high temperature resistant BaTi of the present invention 1-x co x o 3 The resistive variable memory has a structure of a stacked layer structure composed of a bottom electrode 3 , a functional layer 2 and a top electrode 1 . Preferably, the substrate is a mica substrate 4 with a thickness of 0.5 μm, and the bottom electrode 3 is a SrRuO with a thickness of 70 nm. 3 Thin film, the functional layer 2 is BaTi with a thickness of 300nm 0.95 co 0.05 o 3 thin film, the top electrode 1 is an Au thin film with a thickness of 100 nm. After annealing at 500°C for 2 hours, the resistive switching performance test was carried out. The high-to-low resistance ratio of the memory is for example figure 2 shown. The memory is in 10 7 、10 8 and 10 9 The resistance distribution of the high and low resistance states after the secondary resistance switch cycle test is as follows: image 3 shown. The memory has a bend radius of 1mm and a bend of 10 4 、10 5 ...

Embodiment 3

[0025] A kind of flexible high temperature resistant BaTi of the present invention 1-x co x o 3 The resistive variable memory has a structure of a stacked layer structure composed of a bottom electrode 3 , a functional layer 2 and a top electrode 1 . Preferably, the substrate is a mica substrate 4 with a thickness of 0.5 μm, and the bottom electrode 3 is a SrRuO with a thickness of 70 nm. 3 Thin film, the functional layer 2 is BaTi with a thickness of 300nm 0.85 co 0.15 o 3 thin film, the top electrode 1 is an Au thin film with a thickness of 100 nm. The high-to-low resistance ratio of the memory is for example figure 2 shown. The memory is in 10 7 、10 8 and 10 9 The resistance distribution of the high and low resistance states after the secondary resistance switch cycle test is as follows: image 3 shown. The memory has a bend radius of 1mm and a bend of 10 4 、10 5 and 10 6 After the second high and low resistance state resistance distribution as Figure 4 sh...

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Abstract

The invention discloses a flexible high-temperature resistant BaTi<1-x>Co<x>O3 resistive random access memory. The structure of the flexible high-temperature resistant BaTi<1-x>Co<x>O3 resistive random access memory is as follows: a bottom electrode is arranged on a substrate; a BaTi<1-x>Co<x>O3 resistance-change functional layer is arranged on the bottom electrode, wherein x is 0.05-0.3; a top electrode is arranged on the functional layer; and the substrate is flexible mica. The flexible high-temperature resistant resistive random access memory has excellent resistance-change property and good flexible bending property, and can resist bending for 106 times when the bending radius is 1mm; the resistance-change property does not obviously change; the heat temperature resistance is excellent; good resistance-change property can be kept after annealing at 500 DEG C; and the flexible high-temperature resistant BaTi<1-x>Co<x>O3 resistive random access memory has a good application prospect in the field of a flexible memory and a flexible electronic device.

Description

technical field [0001] The invention belongs to the field of nonvolatile resistive memory, in particular to a flexible high temperature resistant BaTi 1-x co x o 3 Resistive memory. Background technique [0002] In recent years, people have higher and higher requirements for the miniaturization and miniaturization of memory devices, and DRAM and flash memory are facing technical limitations. Therefore, resistive memory, as the next generation of non-volatile memory, has attracted widespread attention. Resistive variable memory has the advantages of simple structure, fast working speed, low operating voltage and high storage density, and is one of the most promising non-volatile memories in the future. [0003] Researchers have conducted extensive research on resistive memory devices based on hard substrates, such as the paper by ZhiboYan et al. of Nanjing University: High-performance programmable memory devices based on Co-dopedBaTiO 3 , Advanced Materials, 2011, 23(11):...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/8836
Inventor 谢忠帅杨玉玺马赫袁国亮
Owner NANJING UNIV OF SCI & TECH
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