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Method of adjusting band gap of two-dimensional material layer by layer

A technology of two-dimensional materials and base materials, applied in nanotechnology, electrical components, nanotechnology and other directions for materials and surface science, can solve the problems of destroying the original lattice, taking a long time, reducing the properties of graphene, etc. The effect of good grid protection and simple implementation method

Active Publication Date: 2017-05-17
NANJING UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical solution disclosed in the above patent is to open the zero band gap of graphene and make it have semiconductor properties so that it has broader application prospects. The exposure of single-layer graphene to oxygen atoms will destroy its original lattice and reduce the properties of graphene itself. The method listed in the technical solution of this patent application is a very simple and rapid method that can directly treat two-dimensional graphene with different layer thicknesses. A method for adjusting the bandgap of nanosheets, after treatment, does not affect its own properties

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  • Method of adjusting band gap of two-dimensional material layer by layer
  • Method of adjusting band gap of two-dimensional material layer by layer
  • Method of adjusting band gap of two-dimensional material layer by layer

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specific Embodiment 1

[0033] The specific steps of adjusting the bandgap of tungsten diselenide layer by layer are as follows:

[0034] 1) Choose a plane size of 12mm×12mm, SiO 2 SiO with a thickness of 300nm 2 / Si as the substrate, SiO 2 / Si substrate is cleaned;

[0035] 2) Tape mechanical stripping method on clean SiO 2 / Si substrate to prepare tungsten diselenide samples; and carry out optical contrast difference, conventional Raman, and photoluminescence spectrum characterization of tungsten diselenide, such as figure 1 The optical pictures of the 1, 2, and 3-layer samples of tungsten diselenide samples before bandgap adjustment are shown.

[0036] 3) the tungsten diselenide sample together with SiO 2 The / Si substrate is placed in the cavity of the plasma cleaning machine, and the distance between the sample and the plasma emission center is 12cm;

[0037] 4) Oxygen is introduced, and the ventilation rate is 30 sccm, so that the tungsten diselenide sample is fully in the oxygen atmosphe...

specific Embodiment 2

[0043] The specific steps for adjusting the bandgap of molybdenum disulfide layer by layer are as follows:

[0044] 1) Choose a plane size of 12mm×12mm, SiO 2 SiO with a thickness of 300nm 2 / Si as the substrate, SiO 2 / Si substrate is cleaned;

[0045] 2) Tape mechanical stripping method on clean SiO 2 Molybdenum disulfide samples were prepared on the / Si substrate; and the optical contrast difference, conventional Raman, and photoluminescence spectrum characterization of tungsten diselenide were carried out, such as figure 2 The optical pictures of the tungsten diselenide samples 2, 3, and 4 layers before bandgap adjustment are shown.

[0046] 3) the tungsten diselenide sample together with SiO 2 The / Si substrate is placed in the cavity of the plasma cleaning machine, and the distance between the sample and the plasma emission center is 15cm;

[0047] 4) Introduce oxygen at a ventilation rate of 40 sccm, so that the tungsten diselenide sample is fully in the oxygen a...

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Abstract

The invention relates to a simple method for adjusting the band gap of a two-dimensional material layer by layer. A multi-layer two-dimensional material prepared through mechanical stripping or by other means is placed into a plasma cleaning machine, in which a certain amount of gas (such as oxygen, etc.) is injected. The multi-layer two-dimensional material can be homogeneously etched layer by layer by adjusting the distance (such as 5 to 500mm) between a target sample and the plasma emission center and the working power (5 to 50W) and time (such as 5 to 400s) of the plasma cleaning machine. The method can effectively adjust the band gap of the two-dimensional material by homogeneous adjustment of the two-dimensional material layer by layer from multiple layers to a single layer, thereby exerting a profound influence on the photoelectric performance of the target sample. The method has the advantages of convenient implementation, stable process and remarkable effect, and has great application prospects in the fields of photoelectric detection, biosensing and so forth.

Description

technical field [0001] The invention belongs to the field of preparation of nanometer materials, and oxidizes the surface of two-dimensional layered nanomaterials through the high activity of oxygen plasma, which is a process of etching and oxidizing nanometer materials layer by layer. Background technique [0002] Nowadays, two-dimensional layered nanomaterials have attracted widespread attention from scholars at home and abroad due to their unique physical and chemical properties. Their small size and wide range of properties have been widely used in various fields such as optoelectronic devices, energy storage, and biosensing. Because the physical, chemical and electrical properties of two-dimensional layered nanomaterials have a great correlation with their layer thickness, but the current preparation methods have great limitations and cannot controllably obtain the layer thickness we need, but many applications The two-dimensional layered nanomaterials required in the f...

Claims

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Application Information

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IPC IPC(8): H01L21/02B82Y30/00B82Y40/00
CPCH01L21/02057H01L21/02568H01L21/02664B82Y30/00B82Y40/00
Inventor 李海杨鹏吴诗语黄维
Owner NANJING UNIV OF TECH