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A kind of manufacturing method of p-type silicon carbide ohmic contact

A manufacturing method and ohmic contact technology, applied in the field of microelectronics, can solve problems such as high annealing temperature, high cost, and low melting point, and achieve the effects of solving reliability, preventing oxidation failure, and saving costs

Inactive Publication Date: 2020-01-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For traditional Ti-Al ohmic contacts, the annealing temperature needs to be as high as 1000°C, and the cost is relatively high
Moreover, due to the low melting point and easy oxidation of Al, its application in commercial high-temperature and high-power devices is unreliable

Method used

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  • A kind of manufacturing method of p-type silicon carbide ohmic contact
  • A kind of manufacturing method of p-type silicon carbide ohmic contact

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Embodiment Construction

[0019] The present invention will be further described below in conjunction with the embodiments, and the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other used embodiments obtained by persons of ordinary skill in the art without creative efforts all belong to the protection scope of the present invention.

[0020] In conjunction with the accompanying drawings, a manufacturing method of a P-type silicon carbide ohmic contact, a manufacturing method of a P-type silicon carbide ohmic contact, the manufacturing method includes the following steps: (1) cleaning silicon carbide with a standard RCA; (2) The cleaned silicon carbide is etched by dry etching; (3) metal Ti, Ge, Al, Pt are deposited sequentially on the etched silicon carbide wafer; (4) the deposited silicon carbide Two-step rapid annealing was performed.

[0021] The use of standard RCA in the step 1 to clean silic...

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Abstract

The invention relates to the technical field of microelectronics, a method for making a P-type silicon carbide ohmic contact, comprising the following steps: (1) cleaning the silicon carbide sheet with standard RCA and blowing it dry with nitrogen; (2) using dry etching on the carbonized Etching the surface of the silicon epitaxial layer; (3) sequentially depositing metal Ti, Ge, Al, and Pt on the etched silicon carbide wafer; (4) performing two-step rapid annealing on the silicon carbide. The Pt metal used in the present invention has the effect of anti-oxidation and convenient metal bonding, and the Ge metal can reduce the annealing temperature, and the two-step rapid thermal annealing can obtain a smoother ohmic contact, which effectively reduces the specific contact resistance and eliminates the aluminum-based contact unfavorable factors.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for making a P-type silicon carbide ohmic contact. Background technique [0002] At present, compared with silicon, silicon carbide has excellent physical properties: forbidden bandwidth, high critical breakdown electric field, high thermal conductivity, high electron saturation velocity, and radiation resistance, so it is suitable for high temperature, high frequency, high power and anti-radiation Irradiate electronic devices. However, a key factor limiting device fabrication is the preparation of low-resistance ohmic contacts, and higher specific contact resistances lead to slower switching rates and increased power dissipation. [0003] And the relatively mature n-type silicon carbide ohmic contact (N-type silicon carbide ohmic contact made of Ni-based metal has been widely used and the specific contact resistance value is lower than 10 -5 Ωcm 2 Compared w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L29/45
CPCH01L21/0485H01L29/45
Inventor 许龙来钟志亲余鹏王文昊张国俊戴丽萍王姝娅王志明宋文平夏万顺
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA