Repeated feeding mechanism for continuous crystal pulling with single crystal furnace

Abstract

The invention provides a repeated feeding mechanism for continuous crystal pulling with a single crystal furnace. The mechanism comprises a translation device, a charging device and a lifting device, wherein the charging device is arranged on the translation device; the lifting device is fixed on the charging device; the charging device is provided with an inner charging barrel, the lifting device is provided with a lifting mechanism, and the lifting mechanism is connected with the inner charging barrel; a charging port is formed in the charging device and communicated with the inner charging barrel; an output structure is arranged below the charging device and communicated with the inner charging barrel. The secondary charging process in the single crystal growth process is realized, secondary feeding under the safe and reliable conditions is ensured, pollution to raw materials in the secondary charging process is reduced as far as possible by the aid of the lifting device, and the charging process of polycrystalline silicon raw materials in a second furnace can be performed under the conditions that the temperature is not reduced and the furnace is not stopped after crystal production in a previous furnace is completed, so that electric energy consumption in the crystal growth process is effectively reduced, the cost is saved, and the efficiency is improved.

Description

technical field [0001] The invention relates to the production of single crystal silicon, in particular to a single crystal furnace continuous crystal pulling multiple feeding mechanism. Background technique [0002] Monocrystalline furnaces are the main production equipment for the production of monocrystalline silicon wafers used in solar panels. Generally, production is carried out according to several steps such as charging, vacuuming, chemical material, seeding, shouldering, equal diameter, finishing, and furnace shutdown. [0003] The production process of monocrystalline silicon is to fill the crucible with solid polysilicon raw material under vacuum argon, then heat the polysilicon raw material to melt, and through the rotation of the seed crystal and the tension between the liquid, and lift up to produce single crystal. At present, crystal pulling basically adopts a one-time feeding method, that is, the crucible is filled with polysilicon material at one time befor...

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Problems solved by technology

[0004] Therefore, based on the above two reasons, there is still a large amount of remaining space above the crucible after the silicon material is completely melted, and the crucible is not fully utilized, making the depreciation of the crucible a large proportion in the entire production process

[0005] In addition, although some manufacturers have realized the secondary charging of the single crystal furnace at present, since the secondary charging device is mostly an external device or a container-type device, it is necessary to use the lifting equipment in the auxiliary furnace chamber to realize lifting and discharging during use. process, can not achieve independent work, the process of reproduction needs to spend a certain amount of manpower to connect the secondary feeding mechanism and equipment, and it needs to be fed under the condition of human monitoring. For some equipment, it is necessary to complete the crystal pulling in the first furnace Finally, it is a considerable obstacle to complete the automatic feeding through equipment or mechanisms, and to continue to complete the production tasks of subsequent heats without stopping the furnace. At the same time, the production cost is higher, and the depreciation loss of each heat is higher. Affect production efficiency

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