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Measuring Method of Sheet Resistance in Ohmic Contact Area Based on Vertical Test Pattern

A technology of ohmic contact area and test pattern, which is applied in the field of microelectronics to achieve the effect of improving performance and reliability, simple test method and simple test pattern

Active Publication Date: 2019-04-23
XIDIAN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] When solving the circular transmission line model, it is necessary to calculate the end resistance, and in the process of solving the end resistance, it is necessary to calculate the difference between several similar resistance values, which will also cause a large error

Method used

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  • Measuring Method of Sheet Resistance in Ohmic Contact Area Based on Vertical Test Pattern
  • Measuring Method of Sheet Resistance in Ohmic Contact Area Based on Vertical Test Pattern
  • Measuring Method of Sheet Resistance in Ohmic Contact Area Based on Vertical Test Pattern

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Embodiment Construction

[0034] The specific implementation of the present invention will be further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0035] refer to figure 1 , the present invention carries out the step of ohmic contact area sheet resistance test as follows:

[0036] Step 1, make the test pattern of the square resistance in the ohmic area.

[0037] refer to figure 2 , this step prepares the test pattern of the sheet resistance of the ohmic contact area according to the cross-sectional structure of the existing test pattern, and the steps are as follows:

[0038] 1a) Setting the structure of the test pattern: it is a substrate layer, a GaN buffer layer and an AlGaN barrier layer from bottom to top;

[0039] 1b) Depositing a metal electrode on the AlGaN barrier layer material;

[0040] 1c) Prepare a set of tra...

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Abstract

The invention discloses a method for testing square resistance in an ohm contact area based on vertical test graphs. According to the implementation scheme, the method comprises the following steps: preparing a group of transverse and longitudinal vertically crossed ohm contact test graphs, wherein the transverse test graph comprises a first electrode, a fifth electrode and a fourth electrode, and the longitudinal test graph comprises a second electrode, a fifth electrode and a third electrode; 2, testing a resistance value between the first electrode and the fourth electrode as well as a resistance value between the second electrode and the third electrode in the transverse and longitudinal test graphs separately; and 3, multiplying the obtained resistance value of the longitudinal test graph by a coefficient L / W, performing subtraction with the obtained resistance value of the transverse test graph, and dividing a coefficient 1-L / W by the difference value to obtain the square resistance of the ohm contact area in the test graphs, wherein L and W are lengths of the fifth electrodes in the transverse and longitudinal test graphs. The test graphs are simple and easy to manufacture, the test speed is high, the result is accurate and reliable, and the method can be applied to manufacturing of high-electro-mobility heterojunction transistors.

Description

technical field [0001] The invention belongs to the field of microelectronics, and in particular relates to a method for testing square resistance in an ohmic region, which can be used for evaluating the performance and reliability of devices. Background technique [0002] Compared with the first-generation semiconductor materials represented by Si and the second-generation semiconductor materials represented by GaAs, GaN materials have the advantages of large band gap, high breakdown electric field, high temperature resistance, and corrosion resistance, and become the third-generation semiconductor materials. Typical representative of the material. In particular, heterostructure transistors formed with materials such as AlGaN have high-concentration and high-mobility two-dimensional electron gas at the heterojunction interface, so they have the advantages of large operating current and fast operating speed. The power field has huge advantages and broad application prospect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/14
Inventor 郑雪峰李小炜侯晓慧王颖哲王冲马晓华郝跃
Owner XIDIAN UNIV
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