Rectifying magnetoresistance device formed by utilizing discrete devices and preparation method and application thereof

A discrete device and magneto-resistance technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as limiting the application range of rectifier magnetoresistance, inability to realize rectifier magnetoresistance, and lack of rectification effect, etc., to achieve effective Contribute to large-scale industrial production, wide applicability, and low power consumption

Inactive Publication Date: 2017-05-31
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, so far, rectifying magnetoresistance and its electrical regulation can only exist in devices with both rectifying and magnetoresistance effects. For example, we can observe rectifying magnetoresistance in magnetic tunnel junctions with asymmetric barriers or with

Method used

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  • Rectifying magnetoresistance device formed by utilizing discrete devices and preparation method and application thereof
  • Rectifying magnetoresistance device formed by utilizing discrete devices and preparation method and application thereof
  • Rectifying magnetoresistance device formed by utilizing discrete devices and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0049] A rectifying magneto-resistance device composed of discrete devices includes a magneto-resistance device and a rectifier device connected in parallel with the magneto-resistance device.

[0050] The magnetoresistance device is giant magnetoresistance, anisotropic magnetoresistance, colossal magnetoresistance, tunneling magnetoresistance or singular magnetoresistance in non-magnetic semiconductor.

[0051] The rectifying device is a diode.

[0052] The diode is a Schottky diode or a PN junction diode.

Embodiment 2

[0054] A method for preparing a rectifying magnetoresistive device as described in Embodiment 1, comprising:

[0055] 1) Select a magnetoresistive device;

[0056] 2) A rectifying device is connected in parallel at both ends of the magnetoresistance device to form a rectifying magnetoresistance device.

[0057] The rectifying device is a diode; preferably, the diode is a Schottky diode or a PN junction diode.

[0058] According to the rectifying magnetoresistance device obtained by the above-mentioned preparation method, the modulation method of its magnetoresistance ratio is as follows:

[0059] At the same time, direct current and alternating current are applied to both ends of the rectifying magnetoresistance device, and then the magnetoresistance ratio of the rectifier magnetoresistance device is adjusted to the maximum.

Embodiment 3

[0081] A method for establishing a mathematical theoretical model based on the above-mentioned rectifying magnetoresistive device, comprising the following steps:

[0082] 1) Write the current-voltage relational expression of the magnetoresistance device according to the specific material or structure of the magnetoresistance device,

[0083] I M (t)=f(V(t)) (1)

[0084] In general, the iv curve of the magnetoresistance material conforms to Ohm's law: I M (t)=G(H)·V(t)

[0085] 2) Use the Shockley formula to fit the electrical transport properties of the rectifier device:

[0086] I D (t)=I s (e αV(t) -1), (2)

[0087] In formula 2, α is related to the distribution of the space charge region; I s Represents the magnitude of the reverse saturation current; I D represents the current through the diode;

[0088] 3) The electrical transport properties of the rectified magnetoresistance device formed after the magnetoresistance device and the rectifier device are connecte...

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Abstract

The invention provides a rectifying magnetoresistance device formed by utilizing discrete devices. The rectifying magnetoresistance device utilizes combination of a rectifying effect of a diode and a device purely having a magnetoresistance effect to realize a rectifying magnetoresistance effect. The invention further provides a preparation method of the rectifying magnetoresistance device. The invention also provides a method for building a mathematical theory model based on the rectifying magnetoresistance device. According to the method, the mathematical theory model built according to electrical properties of each device and operating principles thereof is utilized to simulate electrical transport properties of the devices. The rectifying effect and the magnetoresistance effect are organically combined together through connecting the rectifying device and the magnetoresistance device in parallel, so that rectification voltage changes along with an external magnetic field, that is, a rectifying magnetoresistance effect is realized.

Description

technical field [0001] The invention relates to a rectifying magnetoresistance device composed of discrete devices, a preparation method and application thereof, and belongs to the technical field of magnetoelectric control. Background technique [0002] The so-called magnetoresistance effect refers to the phenomenon that the resistivity of materials or devices changes with the change of the applied magnetic field. The magnetoresistance effect is commonly used in the field of magnetic sensors and magnetic read heads. At present, the common magnetoresistance effects include anisotropic magnetoresistance, giant magnetoresistance effect, tunneling magnetoresistance effect, giant magnetoresistance effect, anomalous magnetoresistance effect and so on. In 2015, the spintronics research group of Shandong University successfully discovered the rectifying magnetoresistance effect in the Al / Ge Schottky junction and applied for a patent. Pure sinusoidal AC current, measure the rectif...

Claims

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Application Information

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IPC IPC(8): H01L25/16H01L21/50G06F17/50
CPCG06F30/367H01L21/50H01L25/16
Inventor 田玉峰刘其玮张昆黄启坤王静代由勇颜世申
Owner SHANDONG UNIV
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