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LED preparation method, LED and chip

A technology of quantum wells and quantum well layers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor brightness and wavelength uniformity, poor uniformity of LED brightness and wavelength, etc., to improve mobility, brightness and wavelength. the effect of uniformity

Active Publication Date: 2017-05-31
EPITOP PHOTOELECTRIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in the actual production process, if InGaN green LED epitaxy is grown in the same furnace, there will be problems of poor brightness and wavelength consistency.
[0004] Therefore, the uniformity of LED brightness and wavelength in the prior art is poor

Method used

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  • LED preparation method, LED and chip
  • LED preparation method, LED and chip
  • LED preparation method, LED and chip

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Embodiment Construction

[0040] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0041] The terms "first", "second", "third", "fourth", etc. (if any) in the description and claims of the present invention and the above drawings are used to distinguish similar objects, and not necessarily Used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate circums...

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Abstract

The invention provides an LED preparation method, an LED and a chip, wherein the LED preparation method, the LED and the chip belong to the technical field of light emitting diodes. The LED preparation method comprises the steps of successively growing a U-type gallium nitride layer and an N-type gallium nitride layer on a substrate; successively growing M quantum well structures on the N-type gallium nitride layer, wherein each quantum well structure comprises a quantum well layer, a cap layer and a barrier layer, and M is an integer which is larger than or equal with 10; performing low-voltage separation processing on the quantum well layers in Q quantum well structures in the M quantum well structures, wherein Q is an integer which is smaller than or equal with M; and growing the P-type gallium nitride layer on the quantum well structure. The LED preparation method, the LED and the chip improve LED brightness and wavelength uniformity.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes (Light-Emitting Diode, LED for short), and in particular to an LED preparation method, an LED and a chip. Background technique [0002] III-V semiconductor materials have been widely used in the fields of lighting, solar cells and high-power devices. The third-generation semiconductor material after gallium (GaAs) has attracted extensive attention from the scientific research community and the industry, and GaN is the most important material for manufacturing blue-green LEDs, and it has begun to be fully implemented in the industry. [0003] At present, the forbidden band width of InN is relatively narrow, so the content of In in InGaN determines the light emission wavelength and color of LED, and the wavelength of InGaN green light LED is longer, so during the epitaxial growth process, the growth of the active region requires a lower temperature To obtain a higher content of In com...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/06H01L33/32
CPCH01L33/0075H01L33/06H01L33/32
Inventor 腾龙霍丽艳黄小辉周德保康建梁旭东
Owner EPITOP PHOTOELECTRIC TECH