Radiation hardened latch based on heterogeneous double modular redundancy
A radiation hardening, dual-mode redundancy technology, applied in pulse generation, electrical components, reliability improvement and modification, etc., can solve the problems of large-area overhead, delay and power consumption of three-mode redundancy, and reduce the area  Effects of overhead, low transistor count, good fault tolerance
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[0020] Such as figure 1 As shown, a radiation-hardened latch based on heterogeneous dual-mode redundancy includes a first storage unit 1, a transmission unit 2, a second storage unit 3, and a C unit 4; the first storage unit 1 is composed of 4 Each pair of transistors is composed of two NMOS transistors and one PMOS transistor; the transmission unit 2 is composed of a transmission gate TG3, an inverter INV and a Schmitt trigger; the second memory Unit 3 is composed of 4 sets of transistor pairs, two of which are two NMOS transistors and one PMOS transistor, and the other two groups are two PMOS transistors and one NMOS transistor; the C unit 4 is composed of two PMOS transistors and two NMOS transistors Composition; the signal input ends of the first storage unit 1, the transmission unit 2, and the second storage unit 3 are all connected to the input signal D, and the signal output end of the first storage unit 1 is connected to the first signal input end of the C unit 4 The ...
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