Radiation hardened latch based on heterogeneous double modular redundancy

A radiation hardening, dual-mode redundancy technology, applied in pulse generation, electrical components, reliability improvement and modification, etc., can solve the problems of large-area overhead, delay and power consumption of three-mode redundancy, and reduce the area Effects of overhead, low transistor count, good fault tolerance

Active Publication Date: 2017-05-31
HEFEI UNIV OF TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

Currently commonly used reinforcement methods mainly include process and design. The process mainly refers to layout-level reinforcement. In terms of design, the current classics mainly include triple-mode redundancy and DICE (Dual-Interlocked storage Cell), but they can only tolerate single-point Flip, and triple-mode redundancy has a large area overhead, delay and power consumption

Method used

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  • Radiation hardened latch based on heterogeneous double modular redundancy
  • Radiation hardened latch based on heterogeneous double modular redundancy
  • Radiation hardened latch based on heterogeneous double modular redundancy

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Embodiment Construction

[0020] Such as figure 1 As shown, a radiation-hardened latch based on heterogeneous dual-mode redundancy includes a first storage unit 1, a transmission unit 2, a second storage unit 3, and a C unit 4; the first storage unit 1 is composed of 4 Each pair of transistors is composed of two NMOS transistors and one PMOS transistor; the transmission unit 2 is composed of a transmission gate TG3, an inverter INV and a Schmitt trigger; the second memory Unit 3 is composed of 4 sets of transistor pairs, two of which are two NMOS transistors and one PMOS transistor, and the other two groups are two PMOS transistors and one NMOS transistor; the C unit 4 is composed of two PMOS transistors and two NMOS transistors Composition; the signal input ends of the first storage unit 1, the transmission unit 2, and the second storage unit 3 are all connected to the input signal D, and the signal output end of the first storage unit 1 is connected to the first signal input end of the C unit 4 The ...

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Abstract

The invention relates to a radiation hardened latch based on a heterogeneous double modular redundancy. The radiation hardened latch comprises a first storage unit, a transmission unit, a second storage unit and a C unit; signal input ends of the first storage unit, the transmission unit and the second storage unit are all connected to an input signal D, a signal output end of the first storage unit is connected to a first signal input end of the C unit, a signal output end of the second storage unit is connected to a second signal input end of the C unit, a signal output end of the transmission unit is connected to a signal output end of the C unit, and the signal output end of the C unit serves as an output end of the radiation hardened latch. Because of the SET filtering function of a schmitt trigger, the latch filters a SET pulse in a transparency period; the first storage unit and the second storage unit used in the invention both have a capacity of tolerating single event upset and double node upset, and are combined with the C unit, so that the latch can tolerate the single event upset and multi-node upset, and has very good fault-tolerance performance.

Description

technical field [0001] The invention relates to the technical field of radiation-resistant integrated circuit design, in particular to a radiation-resistant hardened latch based on heterogeneous dual-mode redundancy. Background technique [0002] In the aviation environment, due to the influence of cosmic rays, various particles will be produced, including alpha particles, protons and neutrons. When these particles hit the aircraft, it will cause single event transient SET or single event in the circuit in the chip. Flipping SEUs, and even multi-point flipping MNUs will occur as the size of integrated circuits shrinks. This flips the logic value stored in the circuit, causing a functional error in the circuit. Therefore, in order to make the circuit perform the correct function, it is necessary to carry out anti-radiation hardening design on the circuit. [0003] Latches are commonly used sequential logic devices, so an important aspect of anti-radiation hardening design i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/003H03K3/037
Inventor 黄正峰姚慧杰凤志成梁华国易茂祥欧阳一鸣鲁迎春徐秀敏
Owner HEFEI UNIV OF TECH
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