A chemical vapor deposition device

Abstract

The invention discloses a chemical vapor deposition device. The chemical vapor deposition device comprises a spray head located at the top of a reaction cavity and the reaction cavity with side walls for purging. A metal organic gas inlet guide pipe arrayed in the spray head by a single circle is arranged in a hydride gas inlet guide pipe so that hydride gas can be transported downwards around metal organic gas, and the hydride gas or carrier gas enters the reaction cavity from gas inlet guide pipes inside and outside the spray head. Gas inlet guide pipes are arranged on the side walls of the reaction cavity and used for transporting the hydride gas or the carrier gas into the reaction cavity, and thus a purging function is achieved. A tail gas guide pipe is arranged at the center of the spray head, and reaction gas flows towards the center from the outer side in the radial direction and is finally pumped out from bottom to top through the tail gas guide pipe. By adoption of the chemical vapor deposition device, horizontal laminar flow from the outer side to the center can be formed in the reaction cavity; compared with a long-distance transportation spray head, the utilization rate of the metal organic gas can be increased greatly; compared with a short-distance transportation spray head, deposition of reactant on the side walls of the reaction cavity can be reduced greatly; and the requirement for MOCVD for production can be met.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical vapor deposition device. Background technique [0002] Metal-organic compound vapor deposition (MOCVD) technology can precisely control the thickness, composition, doping and heterojunction interface of the epitaxial layer at the nanometer scale. It has become an important technical method for growing high-quality compound semiconductor thin film materials and devices, and is widely used. It has achieved industrialization in the fields of semiconductor lasers, high-brightness light-emitting diodes, solar cells, etc., especially in the fields of gallium nitride-based light-emitting diodes and lasers. [0003] At present, mainstream MOCVD equipment can be divided into vertical and horizontal reaction chambers according to the air flow channel design. Vertical reaction chambers are represented by the high-speed rotating disk reaction chamber (RDR) of ...

AI Technical Summary

Problems solved by technology

It can be seen that the above-mentioned mainstream MOCVD equipment has its own advantages and disadvantages, and cannot meet the above requirements at the same time. There is a lot of room for improvement in terms of improving the utilization rate of metal organic gases and reducing the deposition on the side wall of the reaction chamber.

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