A vertical npn bipolar transistor with adjustable base voltage and its manufacturing method

Abstract

Provided are a vertical NPN bipolar junction transistor with adjustable base voltage and a manufacturing method thereof. The vertical NPN bipolar junction transistor includes a P-type substrate, an N-type buried layer, a P-type well, N-type doped regions and a split-gate transistor storage unit, wherein the N-type buried layer is formed in the P-type substrate, the P-type well is formed in the N-type buried layer, the N-type doped regions are located on the surface of the P-type substrate and in the N-type buried layer and are separated from the P-type well through shallow trench isolation, and the split-gate transistor storage unit is formed in the P-type well. According to the manufacturing method of the base-voltage-adjustable vertical NPN bipolar junction transistor, a source line and source-region implantation of a split-gate super flash memory serve as an emitting electrode; P-type well implantation and flash-unit ion implantation of the split-gate super flash memory serve as base implantation, and a bit-line active region where P-type heavy doping implantation is conducted of the split-gate super flash memory serves as a base electrode; before a patterning process of the split-gate super flash memory, the N-type buried layer of a collecting electrode is implanted, and an N-type heavy doping active region which surrounds the emitting electrode and the base-electrode structure is connected with the N-type buried layer to serve as the collecting electrode.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing and memory design, more specifically, the present invention relates to a vertical NPN bipolar transistor with adjustable base voltage, and the present invention also relates to the vertical NPN bipolar transistor with adjustable base voltage method of manufacturing transistors. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. . [0003] Flash memory is a non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the tra...

AI Technical Summary

Problems solved by technology

[0005] In the existing Complementary Metal Oxide Semiconductor CMOS (Complementary Metal Oxide Semiconductor) and embedded flash memory process platforms, integrated NPN bipolar transistors (BJT, BipolarJunction Transistor) often use N+ / P-well / deep N-well vertical structure, in which the emitter N+ / P-well is a unilateral abrupt junction, the base region is a P-well, the doping concentration is low, and the junction depth is large (boron element, the implantation energy is about 120-250KeV), so the β value (beta value) lower

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