Film bulk acoustic resonator and production method thereof

A thin-film bulk acoustic wave and manufacturing method technology, applied in electrical components, impedance networks, etc., can solve the problems of thin-film bulk acoustic wave resonator parasitic crosstalk, high processing cost, and difficulty in CMOS circuit integration, and achieve the effect of improving performance and reliability

Active Publication Date: 2017-06-13
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The object of the present invention is to provide a thin film bulk acoustic resonator and its manufacturing method, further solving the problems of parasitic crosstalk, difficulty in integrating with CMOS circuits and high processing cost of thin film bulk acoustic resonators in the prior art

Method used

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  • Film bulk acoustic resonator and production method thereof
  • Film bulk acoustic resonator and production method thereof
  • Film bulk acoustic resonator and production method thereof

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Embodiment 1

[0049] Please refer below image 3 , and combined with Figure 4- Figure 14 , the thin film bulk acoustic resonator and its manufacturing method of the present invention are introduced in detail. in image 3 It is a flow chart of the manufacturing method of the thin film bulk acoustic resonator of the present invention; Figure 4a-12 It is a structural schematic diagram of the film bulk acoustic resonator of the present invention during the manufacturing process; Figure 13 It is a structural schematic diagram of the film bulk acoustic resonator of the present invention; Figure 13-Figure 14 It is a structural schematic diagram of two thin-film bulk acoustic resonators of the present invention.

[0050] Such as image 3 As shown, the manufacturing method of the film bulk acoustic resonator of the present invention includes:

[0051] First, execute step S101, please refer to Figure 4a , providing a substrate 100 . The selection of the substrate 100 is familiar to those...

Embodiment 2

[0065] In another embodiment of the present invention, the steps may also be included:

[0066] provide the substrate;

[0067] forming a first sheet of sacrificial material and a first sheet of insulating material surrounding the first sheet of sacrificial material on the substrate;

[0068] An oscillatory device sheet is formed on the first sacrificial material sheet, and a part of the oscillatory device sheet is overlapped on the first insulating material sheet;

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Abstract

The invention discloses a film bulk acoustic resonator and a production method thereof. According to the film bulk acoustic resonator obtained through the production method for the film bulk acoustic resonator, a plurality of sacrifice material sheet bodies are formed at upper and lower ends of an oscillation device sheet body. The sacrifice material sheet bodies are partially overlapped, so the sacrifice material sheet bodies are connected in sequence, and the sacrifice material sheet bodies are easy to remove. After the sacrifice material sheet bodies are removed, all sides of an overlapping boundary polygon formed by overlapping cavities formed at upper and lower ends of the sacrifice material sheet bodies are unparallel, so the possibility of generating stationary wave oscillation by boundary reflection of horizontal parasitic waves of the film bulk acoustic resonator is reduced, and the parasitic crosstalk is mitigated. According to the film bulk acoustic resonator and the method, the film bulk acoustic resonator and a CMOS circuit are integrated, and the reliability of the device is improved.

Description

technical field [0001] The invention relates to the technical field of filter devices, in particular to a film bulk acoustic resonator (FBAR) and a manufacturing method thereof. Background technique [0002] With the development of mobile communication technology, the amount of mobile data transmission is also increasing rapidly. Therefore, under the premise of limited frequency resources and the use of as few mobile communication devices as possible, improving the transmission power of wireless power transmission equipment such as wireless base stations, micro base stations or repeaters has become a problem that must be considered, and it also means that the The requirements for filter power in the front-end circuit of mobile communication equipment are also getting higher and higher. [0003] At present, the high-power filters in wireless base stations and other equipment are mainly cavity filters, whose power can reach hundreds of watts, but the size of this filter is to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/17H03H9/58
CPCH03H3/02H03H9/173H03H9/586
Inventor 王晓川
Owner NINGBO SEMICON INT CORP
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