HEMT device ohmic contact region square resistance test method
An ohmic contact area and sheet resistance technology, applied in the field of testing, can solve the problems of low characterization accuracy of ohmic contact sheet resistance, affecting the performance evaluation of high electron mobility heterojunction transistors, etc., and achieve a fast, convenient and accurate test method to evaluate performance. and reliability, high reliability
Active Publication Date: 2017-06-20
XIDIAN UNIV
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Problems solved by technology
Obviously, this approximate method will lead to low characterization accuracy of ohmic contact sheet resistance, which will affect the performance evaluation of high electron mobility heterojunction transistors.
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[0038] The specific implementation of the present invention will be further described in detail below in conjunction with the accompanying drawings and examples. The examples are used to illustrate the present invention, but not to limit the scope of the present invention.
[0039] refer to figure 1, the implementation steps of the present invention are as follows:
[0040] Step 1, prepare the test pattern of the square resistance of the ohmic contact area.
[0041] Such as figure 2 As shown, the cross-sectional structure of the existing test pattern is the substrate layer, the GaN buffer layer and the AlGaN barrier layer from bottom to top, and the GaN buffer layer and the AlGaN barrier layer form a heterojunction structure, three metal electrodes are deposited on the AlGaN barrier layer.
[0042] This step is based on figure 2 The sectional structure of the shown existing test pattern prepares the test pattern of the sheet resistance of the ohmic contact area, and its...
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The invention discloses an HEMT device ohmic contact region square resistance test method. The implementation scheme is that three sets of test patterns of which the electrode width is W are prepared, each test pattern includes three ohmic electrodes, the first electrodes of the three sets of test patterns are identical in size and the third electrodes are identical in size, the total distance between the first electrodes and the third electrodes is fixed, the length of the second electrodes of the second set of test pattern and the third set of test pattern is alpha times and beta times of the length of the second electrode of the first set of test pattern respectively, and alpha is unequal to beta which is unequal to 1; the resistance value between the first electrodes and the third electrodes of the three sets of test patterns is tested; difference of the tested resistance value of the second set of test pattern and the first set of test pattern is obtained, and a difference equation is substituted in the resistance equation tested by the third set of test pattern so that the square resistance of the ohmic contact region of each set of test pattern can be obtained. The test pattern is simple and easy to manufacture, testing is easy and convenient and the result is accurate so that the method can be used for process detection and performance evaluation of high-electron-mobility heterojunction transistors.
Description
technical field [0001] The invention belongs to the technical field of testing, and in particular relates to a testing method for the square resistance of an ohmic contact area of a HEMT device, which can be used for process detection and performance evaluation of semiconductor devices. Background technique [0002] Compared with the first-generation semiconductor materials represented by Si and the second-generation semiconductor materials represented by GaAs, GaN materials have the advantages of large band gap, high breakdown electric field, high temperature resistance, and corrosion resistance, so they become the third-generation semiconductor materials. A typical representative of semiconductor materials. Especially the heterostructure high electron mobility transistor HEMT formed with AlGaN and other materials, there is a two-dimensional electron gas with high concentration and high electron mobility at the heterojunction interface, so it has the advantages of large w...
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IPC IPC(8): G01R27/08G01R31/26
CPCG01R27/08G01R31/2621
Inventor 郑雪峰董帅帅王颖哲李小炜王冲马晓华郝跃
Owner XIDIAN UNIV