Low-temperature H2S gas-sensitive material and preparation method

A low-temperature vulcanization and hydrogen technology, applied in the field of electrochemistry, can solve difficult problems such as realization

Active Publication Date: 2017-06-23
LINYI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to realize the lateral multilayer heterostructure array materials by traditional methods (hydrothermal method, traditional electrochemical method, solid solution method, sputtering method, etc.)

Method used

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  • Low-temperature H2S gas-sensitive material and preparation method
  • Low-temperature H2S gas-sensitive material and preparation method
  • Low-temperature H2S gas-sensitive material and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The low-temperature hydrogen sulfide gas sensitive material is composed of continuously distributed Cu 2 O and periodically spaced Co 3 o 4 constituted and is based on Cu 2 O and Cu 2 O-Co 3 o 4 Lateral Periodic Heterostructure Ordered Array Materials of Composite Materials.

[0035] Its preparation method comprises the following steps:

[0036] (1) Using 50mL deionized water and 0.7248g Cu(NO 3 ) 2 and 0.4365g Co(NO 3 ) 2 The electrolyte raw material is used to configure the electrolyte, and the electrolyte uses HNO 3 Adjust the pH to 4;

[0037] (2) In the temperature-controlled growth chamber, two 2 mm wide and 3 cm long copper foil electrodes (30 μm thick) are placed parallel to each other at a distance of 6 mm with a surface oxidized silicon wafer or glass wafer as the substrate. On the substrate, drop 20 μL of electrolyte solution between the two electrodes, cover with a cover glass, and control the temperature at -4.5 °C;

[0038] (3) Then use the co...

Embodiment 2

[0048] The low-temperature hydrogen sulfide gas sensitive material is composed of continuously distributed Cu 2 O and periodically spaced Co 3 o 4 constituted and is based on Cu 2 O and Cu 2 O-Co 3 o 4 Lateral Periodic Heterostructure Ordered Array Materials of Composite Materials.

[0049] Its preparation method comprises the following steps:

[0050] (1) Using 20mL deionized water and 0.2899g Cu(NO 3 ) 2 and 0.1746g Co(NO 3 ) 2 The electrolyte raw material is used to configure the electrolyte, and the electrolyte uses HNO 3 Adjust the pH to 3.5;

[0051] (2) In the temperature-controlled growth chamber, two 2 mm wide and 3 cm long copper foil electrodes (30 μm thick) are placed parallel to each other at a distance of 6 mm with a surface oxidized silicon wafer or glass wafer as the substrate. On the substrate, drop 20 μL of electrolyte solution between the two electrodes, cover with a cover glass, and control the temperature at -4.5 °C;

[0052] (3) Then use the ...

Embodiment 3

[0056] The low-temperature hydrogen sulfide gas sensitive material is composed of continuously distributed Cu 2 O and periodically spaced Co 3 o 4 constituted and is based on Cu 2 O and Cu 2 O-Co 3 o 4 Lateral Periodic Heterostructure Ordered Array Materials of Composite Materials.

[0057] Its preparation method comprises the following steps:

[0058] (1) Using 40mL deionized water and 0.5798g Cu(NO 3 ) 2 and 0.3492g Co(NO 3 ) 2 The electrolyte raw material is used to configure the electrolyte, and the electrolyte uses HNO 3 Adjust the pH to 4.5;

[0059] (2) In the temperature-controlled growth chamber, two 2 mm wide and 3 cm long copper foil electrodes (30 μm thick) are placed parallel to each other at a distance of 6 mm with a surface oxidized silicon wafer or glass wafer as the substrate. On the substrate, drop 20 μL of electrolyte solution between the two electrodes, cover with a cover glass, and control the temperature at -4.5 °C;

[0060] (3) Then use the ...

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PUM

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Abstract

The invention discloses a low-temperature H2S (hydrogen sulfide) gas-sensitive material and a preparation method thereof, and belongs to the technical field of electrochemistry, which solves the problem that the existing gas-sensitive material cannot be used to detect gas under the superlow-temperature extreme condition. The low-temperature hydrogen sulfide gas-sensitive material is of a nanowire cyclic array structure consisting of continuously distributed Cu2O and cyclically spaced Co3O4. The preparation method comprises the following steps of (1) preparing an electrolyte; (2) by using a silicon sheet or a glass sheet as a substrate, dropwise adding the electrolyte liquid between two copper foil electrodes; (3) refrigerating and icing the electrolyte liquid in a temperature-controllable growth room, and placing for 20 to 40min; (4) applying semi-sine waveform deposition voltage onto the electrodes to deposit electrolyte; (5) after depositing is finished, fetching out the substrate, and cleaning by deionized water, so as to obtain the Cu2O / Co3O4-based low-temperature H2S gas-sensitive material attached to the substrate. The low-temperature hydrogen sulfide gas-sensitive material can be used for detecting H2S gas under the superlow-temperature extreme condition.

Description

technical field [0001] The invention relates to a low-temperature hydrogen sulfide gas-sensitive material and a preparation method, belonging to the technical field of electrochemistry. Background technique [0002] Hydrogen sulfide (H 2 S) is a colorless, flammable, acidic and highly toxic gas with a low concentration of H 2 S gas can damage the eyes, respiratory system and central nervous system. When the concentration is high, it can paralyze the olfactory nerve and is odorless and cannot be detected. Inhalation of a small amount of high-concentration H 2 S can be fatal in a short time. So, H 2 Accurate detection of S is very important. And H 2 S is a flammable gas with a lower explosion limit of only 4%, so high temperatures should be avoided during detection. Therefore, H at low temperature 2 S gas detection has become a research hotspot. Prepared at low temperature with H 2 Sensitive materials with S gas-sensing properties become the key to solving the problem...

Claims

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Application Information

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IPC IPC(8): G01N27/12B82Y30/00B82Y40/00C25B1/00C25D5/54C25D9/04
CPCB82Y30/00B82Y40/00C25B1/00C25D5/54C25D9/04G01N27/127
Inventor 崔光亮张品华张杰陈丽
Owner LINYI UNIVERSITY
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