Chip protection ring, semiconductor chip, semiconductor wafer and packaging method

Abstract

The invention provides a chip protection ring, a semiconductor chip, a semiconductor wafer and a packaging method. Through breaking a metal ring in the topmost layer of the protection ring near each bonding pad and reducing the size of a metal ring in the second topmost layer, a conductive plug in the topmost layer is not contacted with the metal ring in the second topmost layer and the rest below metal rings, the metal ring in the topmost layer is thus isolated and suspended, short circuit does not happen to bonding wires even if the bonding wires are contacted with the metal ring in the topmost layer in the case of packaging and bonding, and while short circuit between the bonding wires can be prevented, a protection role of the protection ring can still be ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chip protection ring, a semiconductor chip, a semiconductor wafer and a packaging method. Background technique [0002] In the semiconductor manufacturing process, usually, the wafer formed with the integrated circuit is cut into individual chips (chips), and then these chips are manufactured into semiconductor package structures with different functions. Specific reference figure 1 , figure 1 It is a top view of the wafer, and the wafer is composed of a plurality of chips 10 , and two adjacent chips 10 are separated by scribe lines (or scribe lines, or blocks) 11 . Each chip 10 includes a device structure, an interconnection structure, and pads formed on a substrate through processes such as deposition, photolithography (lithography), etching, doping, and heat treatment. Afterwards, the wafer is diced into a plurality of independent chips 10 along the di...

AI Technical Summary

Problems solved by technology

The inventor found that since the bonding wire 14 is very close to the surface of the chip 10, and the guard ring 12 is also very close to the bonding pad 13, during the bonding process, the solder balls may be too large and shift due to factors such as unstable process conditions. , so it is easy for the welding wire 14 to come into contact with the guard ring 12, causing the protective layer 125 above the guard ring to be crushed, and the welding wire 14 directly contacts the top metal layer 1233 of the guard ring 12 and the topmost metal ring 1231

If a similar situation occurs with other bonding wires, then the two bonding wires 14 are short-circuited due to simultaneous contact with the top metal layer 12313 of the top metal layer of the guard ring 12, which is very likely to cause the chip 10 to fail, such as some functions of the chip 10 Does not work properly or the performance of the chip does not meet the design requirements

And remanufacturing wafers with the same process conditions will cost a lot of manpower and financial resources

If the solder balls are corroded by acid solution, the aluminum on pad 13 will also be corroded and cannot be re-bonded

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